Knocking down highly-ordered large-scale nanowire arrays

Alexander Pevzner, Yoni Engel, Roey Elnathan, Tamir Ducobni, Moshit Ben-Ishai, Koteeswara Reddy, Nava Shpaisman, Alexander Tsukernik, Mark Oksman, Fernando Patolsky

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74 Citations (Scopus)


The large-scale assembly of nanowire elements with controlled and uniform orientation and density at spatially well-defined locations on solid substrates presents one of the most significant challenges facing their integration in real-world electronic applications. Here, we present the universal "knocking-down" approach, based on the controlled in-place planarization of nanowire elements, for the formation of large-scale ordered nanowire arrays. The controlled planarization of the nanowires is achieved by the use of an appropriate elastomer-covered rigid-roller device. After being knocked down, each nanowire in the array can be easily addressed electrically, by a simple single photolithographic step, to yield a large number of nanoelectrical devices with an unprecedented high-fidelity rate. The approach allows controlling, in only two simple steps, all possible array parameters, that is, nanowire dimensions, chemical composition, orientation, and density. The resulting knocked-down arrays can be further used for the creation of massive nanoelectronic-device arrays. More than million devices were already fabricated with yields over 98% on substrate areas of up, but not limited to, to 10 cm2.

Original languageEnglish
Pages (from-to)1202-1208
Number of pages7
JournalNano Letters
Issue number4
Publication statusPublished - 14 Apr 2010


  • Arrays
  • Electrical devices
  • Field effect transistors
  • Nanowire

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