TY - JOUR
T1 - Knocking down highly-ordered large-scale nanowire arrays
AU - Pevzner, Alexander
AU - Engel, Yoni
AU - Elnathan, Roey
AU - Ducobni, Tamir
AU - Ben-Ishai, Moshit
AU - Reddy, Koteeswara
AU - Shpaisman, Nava
AU - Tsukernik, Alexander
AU - Oksman, Mark
AU - Patolsky, Fernando
PY - 2010/4/14
Y1 - 2010/4/14
N2 - The large-scale assembly of nanowire elements with controlled and uniform orientation and density at spatially well-defined locations on solid substrates presents one of the most significant challenges facing their integration in real-world electronic applications. Here, we present the universal "knocking-down" approach, based on the controlled in-place planarization of nanowire elements, for the formation of large-scale ordered nanowire arrays. The controlled planarization of the nanowires is achieved by the use of an appropriate elastomer-covered rigid-roller device. After being knocked down, each nanowire in the array can be easily addressed electrically, by a simple single photolithographic step, to yield a large number of nanoelectrical devices with an unprecedented high-fidelity rate. The approach allows controlling, in only two simple steps, all possible array parameters, that is, nanowire dimensions, chemical composition, orientation, and density. The resulting knocked-down arrays can be further used for the creation of massive nanoelectronic-device arrays. More than million devices were already fabricated with yields over 98% on substrate areas of up, but not limited to, to 10 cm2.
AB - The large-scale assembly of nanowire elements with controlled and uniform orientation and density at spatially well-defined locations on solid substrates presents one of the most significant challenges facing their integration in real-world electronic applications. Here, we present the universal "knocking-down" approach, based on the controlled in-place planarization of nanowire elements, for the formation of large-scale ordered nanowire arrays. The controlled planarization of the nanowires is achieved by the use of an appropriate elastomer-covered rigid-roller device. After being knocked down, each nanowire in the array can be easily addressed electrically, by a simple single photolithographic step, to yield a large number of nanoelectrical devices with an unprecedented high-fidelity rate. The approach allows controlling, in only two simple steps, all possible array parameters, that is, nanowire dimensions, chemical composition, orientation, and density. The resulting knocked-down arrays can be further used for the creation of massive nanoelectronic-device arrays. More than million devices were already fabricated with yields over 98% on substrate areas of up, but not limited to, to 10 cm2.
KW - Arrays
KW - Electrical devices
KW - Field effect transistors
KW - Nanowire
UR - http://www.scopus.com/inward/record.url?scp=77951035525&partnerID=8YFLogxK
U2 - 10.1021/nl903560u
DO - 10.1021/nl903560u
M3 - Article
C2 - 20199032
AN - SCOPUS:77951035525
SN - 1530-6984
VL - 10
SP - 1202
EP - 1208
JO - Nano Letters
JF - Nano Letters
IS - 4
ER -