Kinetic studies of nanoscale crystallization in electronic materials

C. Hayzelden, J. L. Batstone

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review


We report a kinetic analysis of low-temperature NiSi2-mediated crystallization of amorphous Si by in situ transmission electron microscopy. The initiation of crystallization by formation of crystalline Si on buried NiSi2 precipitates is shown to have an activation energy of 2.8±0.7 eV. Crystallization of the amorphous Si via migrating precipitates of NiSi2 occurs with an activation energy of 2.0±0.2 eV. The significance of these activation energies is discussed in terms of possible atomistic mechanisms of crystalline Si initiation and subsequent growth. Amorphous Si is reported to crystallize at temperatures as low as 450 °C.

Original languageEnglish
Title of host publicationProceedings of the 1995 MRS Fall Meeting; Boston
Number of pages14
Publication statusPublished - 1996
Externally publishedYes
EventMaterials Research Society Symposium (MRS) 1995 (Fall) - Boston, United States of America
Duration: 27 Nov 19951 Dec 1995

Publication series

NameMaterials Research Society Symposium - Proceedings
ISSN (Print)0272-9172


ConferenceMaterials Research Society Symposium (MRS) 1995 (Fall)
Abbreviated titleMRS 1995 Fall
Country/TerritoryUnited States of America

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