@inproceedings{302e015cc9584ee99cd0fc5d723b2c4a,
title = "Isotropic oxidation by plasma oxidation and investigation of rie induced effects for development of 4H-SiC trench MOSFETs",
abstract = " In this work, we examined the oxidation growth rates of the Si-face (<0001>) and a-faces (<11-20>) of 4H-SiC by carrying out oxidation in the 850 °C-950 °C temperature range in a plasma afterglow furnace for application to trench MOSFETs. At 900 °C, this method results in almost equal oxide thickness on the Si-face and a-face which would nominally correspond to trench bottom and sidewalls in trench devices. Our results indicate that after NO annealing, the electronic properties of the plasma oxidized SiO 2 /SiC interface is comparable to control samples with gate oxides formed by dry oxidation at 1150 °C followed by NO annealing. Next, the effect of reactive ion etching (RIE) of 4H-SiC surfaces prior to gate oxidation was investigated using planar 4H-SiC MOS capacitors. Our experiments show that oxidation followed by NO annealing of surfaces with smooth morphology following the RIE step, results in similar interface charge and trap densities as MOS capacitors which did not undergo the RIE etching. ",
keywords = "A-face, DLTS, Interface states, Plasma oxidation, RIE, Trench MOSFETs",
author = "A. Jayawardena and Ahyi, {A. C.} and G. Liu and Shaw, {R. G.} and S. Dhar",
year = "2018",
month = jun,
day = "1",
doi = "10.4028/www.scientific.net/MSF.924.444",
language = "English",
isbn = "9783035711455",
series = "Materials Science Forum",
publisher = "Trans Tech Publications",
pages = "444--448",
editor = "Michael Dudley and Aivars Lelis and Robert Stahlbush and Philip Neudeck and Anup Bhalla and Devaty, {Robert P.}",
booktitle = "Silicon Carbide and Related Materials 2017",
address = "Switzerland",
note = "International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 ; Conference date: 17-09-2017 Through 22-09-2017",
}