Isotropic oxidation by plasma oxidation and investigation of rie induced effects for development of 4H-SiC trench MOSFETs

A. Jayawardena, A. C. Ahyi, G. Liu, R. G. Shaw, S. Dhar

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

1 Citation (Scopus)

Abstract

In this work, we examined the oxidation growth rates of the Si-face (<0001>) and a-faces (<11-20>) of 4H-SiC by carrying out oxidation in the 850 °C-950 °C temperature range in a plasma afterglow furnace for application to trench MOSFETs. At 900 °C, this method results in almost equal oxide thickness on the Si-face and a-face which would nominally correspond to trench bottom and sidewalls in trench devices. Our results indicate that after NO annealing, the electronic properties of the plasma oxidized SiO 2 /SiC interface is comparable to control samples with gate oxides formed by dry oxidation at 1150 °C followed by NO annealing. Next, the effect of reactive ion etching (RIE) of 4H-SiC surfaces prior to gate oxidation was investigated using planar 4H-SiC MOS capacitors. Our experiments show that oxidation followed by NO annealing of surfaces with smooth morphology following the RIE step, results in similar interface charge and trap densities as MOS capacitors which did not undergo the RIE etching.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2017
EditorsMichael Dudley, Aivars Lelis, Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty
Place of PublicationSwitzerland
PublisherTrans Tech Publications
Pages444-448
Number of pages5
ISBN (Print)9783035711455
DOIs
Publication statusPublished - 1 Jun 2018
Externally publishedYes
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2017 - Columbia, United States of America
Duration: 17 Sep 201722 Sep 2017

Publication series

NameMaterials Science Forum
Volume924
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

ConferenceInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2017
CountryUnited States of America
CityColumbia
Period17/09/1722/09/17

Keywords

  • A-face
  • DLTS
  • Interface states
  • Plasma oxidation
  • RIE
  • Trench MOSFETs

Cite this