Abstract
The behavior of phosphine-doped Si nanocrystal material is studied in this work from the perspectives of crystallization, photoluminescence, carrier density and conductivity. Phosphine was incorporated in the material during the sputter process. It was observed that the phosphine helped to reduce the defects in the material. This was evident from the reduction of the photoluminescence of a possible defect-related energy level located at 1.30 eV, which prevailed at low temperature when phosphine was absent. Temperature dependent Hall measurement showed the carrier densities in Si nanocrystal material remained around 1019 and 1020 cm-3 from 80 K to 340 K for samples doped with 3 sccm and 9 sccm phosphine respectively during sputtering. Such metallic behavior can be due to degenerate doping in the material.
Original language | English |
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Title of host publication | 2014 IEEE 40th Photovoltaic Specialist Conference |
Editors | Angèle Reinders |
Place of Publication | Piscataway NJ USA |
Publisher | IEEE, Institute of Electrical and Electronics Engineers |
Pages | 666-668 |
Number of pages | 3 |
ISBN (Electronic) | 9781479943982 |
ISBN (Print) | 9781479943999 |
DOIs | |
Publication status | Published - 2014 |
Externally published | Yes |
Event | IEEE Photovoltaic Specialists Conference 2014 - Denver, United States of America Duration: 8 Jun 2014 → 13 Jun 2014 Conference number: 40th https://ieeexplore.ieee.org/xpl/conhome/6912652/proceeding (Proceedings - Part 1) https://ieeexplore.ieee.org/xpl/conhome/7587802/proceeding (Proceedings - Part 2) |
Conference
Conference | IEEE Photovoltaic Specialists Conference 2014 |
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Abbreviated title | PVSC 2014 |
Country/Territory | United States of America |
City | Denver |
Period | 8/06/14 → 13/06/14 |
Internet address |
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Keywords
- Hall effect
- photoluminescence
- photovoltaic effect
- quantum dots
- Raman scattering
- semiconductivity
- silicon
- thin film devices