Investigation on the effects of phosphine doping in Si nanocrystal material

Lingfeng Wu, Ivan Perez-Wurfl, Ziyun Lin, Xuguang Jia, Tian Zhang, Binesh Puthen-Veettil, Terry Chien Jen Yang, Hongze Xia, Gavin Conibeer

Research output: Chapter in Book/Report/Conference proceedingConference PaperOther

4 Citations (Scopus)


The behavior of phosphine-doped Si nanocrystal material is studied in this work from the perspectives of crystallization, photoluminescence, carrier density and conductivity. Phosphine was incorporated in the material during the sputter process. It was observed that the phosphine helped to reduce the defects in the material. This was evident from the reduction of the photoluminescence of a possible defect-related energy level located at 1.30 eV, which prevailed at low temperature when phosphine was absent. Temperature dependent Hall measurement showed the carrier densities in Si nanocrystal material remained around 1019 and 1020 cm-3 from 80 K to 340 K for samples doped with 3 sccm and 9 sccm phosphine respectively during sputtering. Such metallic behavior can be due to degenerate doping in the material.

Original languageEnglish
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference
EditorsAngèle Reinders
Place of PublicationPiscataway NJ USA
PublisherIEEE, Institute of Electrical and Electronics Engineers
Number of pages3
ISBN (Electronic)9781479943982
ISBN (Print)9781479943999
Publication statusPublished - 2014
Externally publishedYes
EventIEEE Photovoltaic Specialists Conference 2014 - Denver, United States of America
Duration: 8 Jun 201413 Jun 2014
Conference number: 40th (Proceedings - Part 1) (Proceedings - Part 2)


ConferenceIEEE Photovoltaic Specialists Conference 2014
Abbreviated titlePVSC 2014
Country/TerritoryUnited States of America
Internet address


  • Hall effect
  • photoluminescence
  • photovoltaic effect
  • quantum dots
  • Raman scattering
  • semiconductivity
  • silicon
  • thin film devices

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