Investigation on the effects of phosphine doping in Si nanocrystal material

Lingfeng Wu; Ivan Perez-Wurfl; Ziyun Lin; Xuguang Jia; Tian Zhang; Binesh Puthen-Veettil; Terry Chien Jen Yang; Hongze Xia; Gavin Conibeer

doi:10.1109/PVSC.2014.6925009

Investigation on the effects of phosphine doping in Si nanocrystal material

Lingfeng Wu, Ivan Perez-Wurfl, Ziyun Lin, Xuguang Jia, Tian Zhang, Binesh Puthen-Veettil, Terry Chien Jen Yang, Hongze Xia, Gavin Conibeer

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

3 Citations (Scopus)

Abstract

The behavior of phosphine-doped Si nanocrystal material is studied in this work from the perspectives of crystallization, photoluminescence, carrier density and conductivity. Phosphine was incorporated in the material during the sputter process. It was observed that the phosphine helped to reduce the defects in the material. This was evident from the reduction of the photoluminescence of a possible defect-related energy level located at 1.30 eV, which prevailed at low temperature when phosphine was absent. Temperature dependent Hall measurement showed the carrier densities in Si nanocrystal material remained around 10¹⁹ and 10²⁰ cm^-3 from 80 K to 340 K for samples doped with 3 sccm and 9 sccm phosphine respectively during sputtering. Such metallic behavior can be due to degenerate doping in the material.

Original language	English
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference
Editors	Angèle Reinders
Place of Publication	Piscataway NJ USA
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	666-668
Number of pages	3
ISBN (Electronic)	9781479943982
ISBN (Print)	9781479943999
DOIs	https://doi.org/10.1109/PVSC.2014.6925009
Publication status	Published - 2014
Externally published	Yes
Event	IEEE Photovoltaic Specialists Conference 2014 - Denver, United States of America Duration: 8 Jun 2014 → 13 Jun 2014 Conference number: 40th https://ieeexplore.ieee.org/xpl/conhome/6912652/proceeding (Proceedings - Part 1) https://ieeexplore.ieee.org/xpl/conhome/7587802/proceeding (Proceedings - Part 2)

Conference

Conference	IEEE Photovoltaic Specialists Conference 2014
Abbreviated title	PVSC 2014
Country/Territory	United States of America
City	Denver
Period	8/06/14 → 13/06/14
Internet address	https://ieeexplore.ieee.org/xpl/conhome/6912652/proceeding (Proceedings - Part 1) https://ieeexplore.ieee.org/xpl/conhome/7587802/proceeding (Proceedings - Part 2)

Keywords

Hall effect
photoluminescence
photovoltaic effect
quantum dots
Raman scattering
semiconductivity
silicon
thin film devices

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2014.6925009

Cite this

Wu, L., Perez-Wurfl, I., Lin, Z., Jia, X., Zhang, T., Puthen-Veettil, B., Yang, T. C. J., Xia, H., & Conibeer, G. (2014). Investigation on the effects of phosphine doping in Si nanocrystal material. In A. Reinders (Ed.), 2014 IEEE 40th Photovoltaic Specialist Conference (pp. 666-668). IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PVSC.2014.6925009

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title = "Investigation on the effects of phosphine doping in Si nanocrystal material",

abstract = "The behavior of phosphine-doped Si nanocrystal material is studied in this work from the perspectives of crystallization, photoluminescence, carrier density and conductivity. Phosphine was incorporated in the material during the sputter process. It was observed that the phosphine helped to reduce the defects in the material. This was evident from the reduction of the photoluminescence of a possible defect-related energy level located at 1.30 eV, which prevailed at low temperature when phosphine was absent. Temperature dependent Hall measurement showed the carrier densities in Si nanocrystal material remained around 1019 and 1020 cm-3 from 80 K to 340 K for samples doped with 3 sccm and 9 sccm phosphine respectively during sputtering. Such metallic behavior can be due to degenerate doping in the material.",

keywords = "Hall effect, photoluminescence, photovoltaic effect, quantum dots, Raman scattering, semiconductivity, silicon, thin film devices",

author = "Lingfeng Wu and Ivan Perez-Wurfl and Ziyun Lin and Xuguang Jia and Tian Zhang and Binesh Puthen-Veettil and Yang, {Terry Chien Jen} and Hongze Xia and Gavin Conibeer",

year = "2014",

doi = "10.1109/PVSC.2014.6925009",

language = "English",

isbn = "9781479943999",

pages = "666--668",

editor = "Ang{\`e}le Reinders",

booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States of America",

note = "IEEE Photovoltaic Specialists Conference 2014, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

url = "https://ieeexplore.ieee.org/xpl/conhome/6912652/proceeding, https://ieeexplore.ieee.org/xpl/conhome/7587802/proceeding",

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Wu, L, Perez-Wurfl, I, Lin, Z, Jia, X, Zhang, T, Puthen-Veettil, B, Yang, TCJ, Xia, H & Conibeer, G 2014, Investigation on the effects of phosphine doping in Si nanocrystal material. in A Reinders (ed.), 2014 IEEE 40th Photovoltaic Specialist Conference. IEEE, Institute of Electrical and Electronics Engineers, Piscataway NJ USA, pp. 666-668, IEEE Photovoltaic Specialists Conference 2014, Denver, Colorado, United States of America, 8/06/14. https://doi.org/10.1109/PVSC.2014.6925009

Investigation on the effects of phosphine doping in Si nanocrystal material. / Wu, Lingfeng; Perez-Wurfl, Ivan; Lin, Ziyun et al.

2014 IEEE 40th Photovoltaic Specialist Conference. ed. / Angèle Reinders. Piscataway NJ USA : IEEE, Institute of Electrical and Electronics Engineers, 2014. p. 666-668.

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

TY - GEN

T1 - Investigation on the effects of phosphine doping in Si nanocrystal material

AU - Wu, Lingfeng

AU - Perez-Wurfl, Ivan

AU - Lin, Ziyun

AU - Jia, Xuguang

AU - Zhang, Tian

AU - Puthen-Veettil, Binesh

AU - Yang, Terry Chien Jen

AU - Xia, Hongze

AU - Conibeer, Gavin

N1 - Conference code: 40th

PY - 2014

Y1 - 2014

N2 - The behavior of phosphine-doped Si nanocrystal material is studied in this work from the perspectives of crystallization, photoluminescence, carrier density and conductivity. Phosphine was incorporated in the material during the sputter process. It was observed that the phosphine helped to reduce the defects in the material. This was evident from the reduction of the photoluminescence of a possible defect-related energy level located at 1.30 eV, which prevailed at low temperature when phosphine was absent. Temperature dependent Hall measurement showed the carrier densities in Si nanocrystal material remained around 1019 and 1020 cm-3 from 80 K to 340 K for samples doped with 3 sccm and 9 sccm phosphine respectively during sputtering. Such metallic behavior can be due to degenerate doping in the material.

AB - The behavior of phosphine-doped Si nanocrystal material is studied in this work from the perspectives of crystallization, photoluminescence, carrier density and conductivity. Phosphine was incorporated in the material during the sputter process. It was observed that the phosphine helped to reduce the defects in the material. This was evident from the reduction of the photoluminescence of a possible defect-related energy level located at 1.30 eV, which prevailed at low temperature when phosphine was absent. Temperature dependent Hall measurement showed the carrier densities in Si nanocrystal material remained around 1019 and 1020 cm-3 from 80 K to 340 K for samples doped with 3 sccm and 9 sccm phosphine respectively during sputtering. Such metallic behavior can be due to degenerate doping in the material.

KW - Hall effect

KW - photoluminescence

KW - photovoltaic effect

KW - quantum dots

KW - Raman scattering

KW - semiconductivity

KW - silicon

KW - thin film devices

UR - http://www.scopus.com/inward/record.url?scp=84912083742&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2014.6925009

DO - 10.1109/PVSC.2014.6925009

M3 - Conference Paper

AN - SCOPUS:84912083742

SN - 9781479943999

SP - 666

EP - 668

BT - 2014 IEEE 40th Photovoltaic Specialist Conference

A2 - Reinders, Angèle

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - Piscataway NJ USA

T2 - IEEE Photovoltaic Specialists Conference 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Investigation on the effects of phosphine doping in Si nanocrystal material

Abstract

Conference

Keywords

UN SDGs

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