Investigation of hydridosilsesquioxane-based silicon oxide deposition on Si(111)-7 × 7

Kevin S. Schneider, Thomas M. Owens, Kenneth T. Nicholson, Bonnie J. Ludwig, J. Neil Greeley, Bradford G. Orr, Mark M. Banaszak Holl

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Abstract

X-ray photoemission spectroscopy (XPS), low-energy electron diffraction (LEED), reflection-absorption infrared spectroscopy (RAIRS), and scanning tunneling microscopy (STM) have been used to characterize the discontinuous oxide films formed following exposure of gaseous H8S18O12 hydridosilsesquioxane clusters to Si(111)-7 × 7. Collectively, the four surface characterization techniques support a reaction involving cluster decomposition on the Si(111)-7 × 7 surface. The decomposition of H8S18O12 upon reaction with Si(111)-7 × 7 is in stark contrast with that of the reaction of H8S18O12 with Si(100)-2 × 1 in which the cluster cage remains intact.

Original languageEnglish
Pages (from-to)6233-6241
Number of pages9
JournalLangmuir
Volume18
Issue number16
DOIs
Publication statusPublished - 6 Aug 2002
Externally publishedYes

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