Investigation of hydridosilsesquioxane-based silicon oxide deposition on Si(111)-7 × 7

Kevin S. Schneider; Thomas M. Owens; Kenneth T. Nicholson; Bonnie J. Ludwig; J. Neil Greeley; Bradford G. Orr; Mark M. Banaszak Holl

doi:10.1021/la025615j

Investigation of hydridosilsesquioxane-based silicon oxide deposition on Si(111)-7 × 7

Kevin S. Schneider, Thomas M. Owens, Kenneth T. Nicholson, Bonnie J. Ludwig, J. Neil Greeley, Bradford G. Orr, Mark M. Banaszak Holl

Research output: Contribution to journal › Article › Research › peer-review

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Abstract

X-ray photoemission spectroscopy (XPS), low-energy electron diffraction (LEED), reflection-absorption infrared spectroscopy (RAIRS), and scanning tunneling microscopy (STM) have been used to characterize the discontinuous oxide films formed following exposure of gaseous H₈S₁₈O₁₂ hydridosilsesquioxane clusters to Si(111)-7 × 7. Collectively, the four surface characterization techniques support a reaction involving cluster decomposition on the Si(111)-7 × 7 surface. The decomposition of H₈S₁₈O₁₂ upon reaction with Si(111)-7 × 7 is in stark contrast with that of the reaction of H₈S₁₈O₁₂ with Si(100)-2 × 1 in which the cluster cage remains intact.

Original language	English
Pages (from-to)	6233-6241
Number of pages	9
Journal	Langmuir
Volume	18
Issue number	16
DOIs	https://doi.org/10.1021/la025615j
Publication status	Published - 6 Aug 2002
Externally published	Yes

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title = "Investigation of hydridosilsesquioxane-based silicon oxide deposition on Si(111)-7 × 7",

abstract = "X-ray photoemission spectroscopy (XPS), low-energy electron diffraction (LEED), reflection-absorption infrared spectroscopy (RAIRS), and scanning tunneling microscopy (STM) have been used to characterize the discontinuous oxide films formed following exposure of gaseous H8S18O12 hydridosilsesquioxane clusters to Si(111)-7 × 7. Collectively, the four surface characterization techniques support a reaction involving cluster decomposition on the Si(111)-7 × 7 surface. The decomposition of H8S18O12 upon reaction with Si(111)-7 × 7 is in stark contrast with that of the reaction of H8S18O12 with Si(100)-2 × 1 in which the cluster cage remains intact.",

author = "Schneider, {Kevin S.} and Owens, {Thomas M.} and Nicholson, {Kenneth T.} and Ludwig, {Bonnie J.} and Greeley, {J. Neil} and Orr, {Bradford G.} and {Banaszak Holl}, {Mark M.}",

year = "2002",

month = aug,

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doi = "10.1021/la025615j",

language = "English",

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pages = "6233--6241",

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TY - JOUR

T1 - Investigation of hydridosilsesquioxane-based silicon oxide deposition on Si(111)-7 × 7

AU - Schneider, Kevin S.

AU - Owens, Thomas M.

AU - Nicholson, Kenneth T.

AU - Ludwig, Bonnie J.

AU - Greeley, J. Neil

AU - Orr, Bradford G.

AU - Banaszak Holl, Mark M.

PY - 2002/8/6

Y1 - 2002/8/6

N2 - X-ray photoemission spectroscopy (XPS), low-energy electron diffraction (LEED), reflection-absorption infrared spectroscopy (RAIRS), and scanning tunneling microscopy (STM) have been used to characterize the discontinuous oxide films formed following exposure of gaseous H8S18O12 hydridosilsesquioxane clusters to Si(111)-7 × 7. Collectively, the four surface characterization techniques support a reaction involving cluster decomposition on the Si(111)-7 × 7 surface. The decomposition of H8S18O12 upon reaction with Si(111)-7 × 7 is in stark contrast with that of the reaction of H8S18O12 with Si(100)-2 × 1 in which the cluster cage remains intact.

AB - X-ray photoemission spectroscopy (XPS), low-energy electron diffraction (LEED), reflection-absorption infrared spectroscopy (RAIRS), and scanning tunneling microscopy (STM) have been used to characterize the discontinuous oxide films formed following exposure of gaseous H8S18O12 hydridosilsesquioxane clusters to Si(111)-7 × 7. Collectively, the four surface characterization techniques support a reaction involving cluster decomposition on the Si(111)-7 × 7 surface. The decomposition of H8S18O12 upon reaction with Si(111)-7 × 7 is in stark contrast with that of the reaction of H8S18O12 with Si(100)-2 × 1 in which the cluster cage remains intact.

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DO - 10.1021/la025615j

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VL - 18

SP - 6233

EP - 6241

JO - Langmuir

JF - Langmuir

IS - 16

ER -

Investigation of hydridosilsesquioxane-based silicon oxide deposition on Si(111)-7 × 7

Abstract

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