Investigation of fast and slow decays in InGaN/GaN quantum wells

Guan Sun; Guibao Xu; Yujie J. Ding; Hongping Zhao; Guangyu Liu; Jing Zhang; Nelson Tansu

doi:10.1063/1.3627166

Investigation of fast and slow decays in InGaN/GaN quantum wells

Guan Sun
, Guibao Xu
, Yujie J. Ding
, Hongping Zhao
, Guangyu Liu
, Jing Zhang
, Nelson Tansu

Research output: Contribution to journal › Article › Research › peer-review

53 Citations (Scopus)

Abstract

We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.

Original language	English
Article number	081104
Journal	Applied Physics Letters
Volume	99
Issue number	8
DOIs	https://doi.org/10.1063/1.3627166
Publication status	Published - 22 Aug 2011
Externally published	Yes

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10.1063/1.3627166

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title = "Investigation of fast and slow decays in InGaN/GaN quantum wells",

abstract = "We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.",

author = "Guan Sun and Guibao Xu and Ding, \{Yujie J.\} and Hongping Zhao and Guangyu Liu and Jing Zhang and Nelson Tansu",

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T1 - Investigation of fast and slow decays in InGaN/GaN quantum wells

AU - Sun, Guan

AU - Xu, Guibao

AU - Ding, Yujie J.

AU - Zhao, Hongping

AU - Liu, Guangyu

AU - Zhang, Jing

AU - Tansu, Nelson

PY - 2011/8/22

Y1 - 2011/8/22

N2 - We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.

AB - We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.

UR - https://www.scopus.com/pages/publications/80052417863

U2 - 10.1063/1.3627166

DO - 10.1063/1.3627166

M3 - Article

AN - SCOPUS:80052417863

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 081104

ER -

Investigation of fast and slow decays in InGaN/GaN quantum wells

Abstract

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