Investigation of fast and slow decays in InGaN/GaN quantum wells

Guan Sun, Guibao Xu, Yujie J. Ding, Hongping Zhao, Guangyu Liu, Jing Zhang, Nelson Tansu

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We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.

Original languageEnglish
Article number081104
JournalApplied Physics Letters
Issue number8
Publication statusPublished - 22 Aug 2011
Externally publishedYes

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