Investigation of fast and slow decays in InGaN/GaN quantum wells

Guan Sun; Guibao Xu; Yujie J. Ding; Hongping Zhao; Guangyu Liu; Jing Zhang; Nelson Tansu

doi:10.1063/1.3627166

Investigation of fast and slow decays in InGaN/GaN quantum wells

Guan Sun, Guibao Xu, Yujie J. Ding, Hongping Zhao, Guangyu Liu, Jing Zhang, Nelson Tansu

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Abstract

We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.

Original language	English
Article number	081104
Journal	Applied Physics Letters
Volume	99
Issue number	8
DOIs	https://doi.org/10.1063/1.3627166
Publication status	Published - 22 Aug 2011
Externally published	Yes

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abstract = "We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.",

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AU - Sun, Guan

AU - Xu, Guibao

AU - Ding, Yujie J.

AU - Zhao, Hongping

AU - Liu, Guangyu

AU - Zhang, Jing

AU - Tansu, Nelson

PY - 2011/8/22

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N2 - We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.

AB - We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.

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VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

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Investigation of fast and slow decays in InGaN/GaN quantum wells

Abstract

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