Interface mediated resistive switching in epitaxial NiO nanostructures

Jivika Sullaphen; Kashinath Bogle; Xuan Cheng; John M. Gregg; Nagarajan Valanoor

doi:10.1063/1.4714888

Interface mediated resistive switching in epitaxial NiO nanostructures

Jivika Sullaphen
, Kashinath Bogle
, Xuan Cheng
, John M. Gregg
, Nagarajan Valanoor

Research output: Contribution to journal › Article › Research › peer-review

62 Citations (Scopus)

Abstract

We report on the non-volatile resistive switching properties of epitaxial nickel oxide (NiO) nanostructures, 10-100 nm wide and up to 30 nm high grown on (001)-Nb:SrTiO₃ substrates. Conducting-atomic force microscopy on individual nano-islands confirms prominent bipolar switching with a maximum ON/OFF ratio of ∼10³ at a read voltage of ∼0.4V. This ratio is found to decrease with increasing height of the nanostructure. Linear fittings of I-V loops reveal that low and high resistance states follow Ohmic-conduction and Schottky-emission mechanism, respectively. The switching behavior (dependence on height) is attributed to the modulation of the carrier density at the nanostructure-substrate interface due to the applied electric field.

Original language	English
Article number	203115
Number of pages	5
Journal	Applied Physics Letters
Volume	100
Issue number	20
DOIs	https://doi.org/10.1063/1.4714888
Publication status	Published - 14 May 2012
Externally published	Yes

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10.1063/1.4714888

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title = "Interface mediated resistive switching in epitaxial NiO nanostructures",

abstract = "We report on the non-volatile resistive switching properties of epitaxial nickel oxide (NiO) nanostructures, 10-100 nm wide and up to 30 nm high grown on (001)-Nb:SrTiO3 substrates. Conducting-atomic force microscopy on individual nano-islands confirms prominent bipolar switching with a maximum ON/OFF ratio of ∼103 at a read voltage of ∼0.4V. This ratio is found to decrease with increasing height of the nanostructure. Linear fittings of I-V loops reveal that low and high resistance states follow Ohmic-conduction and Schottky-emission mechanism, respectively. The switching behavior (dependence on height) is attributed to the modulation of the carrier density at the nanostructure-substrate interface due to the applied electric field. ",

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AU - Sullaphen, Jivika

AU - Bogle, Kashinath

AU - Cheng, Xuan

AU - Gregg, John M.

AU - Valanoor, Nagarajan

PY - 2012/5/14

Y1 - 2012/5/14

N2 - We report on the non-volatile resistive switching properties of epitaxial nickel oxide (NiO) nanostructures, 10-100 nm wide and up to 30 nm high grown on (001)-Nb:SrTiO3 substrates. Conducting-atomic force microscopy on individual nano-islands confirms prominent bipolar switching with a maximum ON/OFF ratio of ∼103 at a read voltage of ∼0.4V. This ratio is found to decrease with increasing height of the nanostructure. Linear fittings of I-V loops reveal that low and high resistance states follow Ohmic-conduction and Schottky-emission mechanism, respectively. The switching behavior (dependence on height) is attributed to the modulation of the carrier density at the nanostructure-substrate interface due to the applied electric field.

AB - We report on the non-volatile resistive switching properties of epitaxial nickel oxide (NiO) nanostructures, 10-100 nm wide and up to 30 nm high grown on (001)-Nb:SrTiO3 substrates. Conducting-atomic force microscopy on individual nano-islands confirms prominent bipolar switching with a maximum ON/OFF ratio of ∼103 at a read voltage of ∼0.4V. This ratio is found to decrease with increasing height of the nanostructure. Linear fittings of I-V loops reveal that low and high resistance states follow Ohmic-conduction and Schottky-emission mechanism, respectively. The switching behavior (dependence on height) is attributed to the modulation of the carrier density at the nanostructure-substrate interface due to the applied electric field.

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SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Interface mediated resistive switching in epitaxial NiO nanostructures

Abstract

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