Interface mediated resistive switching in epitaxial NiO nanostructures

Jivika Sullaphen, Kashinath Bogle, Xuan Cheng, John M. Gregg, Nagarajan Valanoor

Research output: Contribution to journalArticleResearchpeer-review

50 Citations (Scopus)

Abstract

We report on the non-volatile resistive switching properties of epitaxial nickel oxide (NiO) nanostructures, 10-100 nm wide and up to 30 nm high grown on (001)-Nb:SrTiO3 substrates. Conducting-atomic force microscopy on individual nano-islands confirms prominent bipolar switching with a maximum ON/OFF ratio of ∼103 at a read voltage of ∼0.4V. This ratio is found to decrease with increasing height of the nanostructure. Linear fittings of I-V loops reveal that low and high resistance states follow Ohmic-conduction and Schottky-emission mechanism, respectively. The switching behavior (dependence on height) is attributed to the modulation of the carrier density at the nanostructure-substrate interface due to the applied electric field. 

Original languageEnglish
Article number203115
Number of pages5
JournalApplied Physics Letters
Volume100
Issue number20
DOIs
Publication statusPublished - 14 May 2012
Externally publishedYes

Cite this