Interaction between Cu and Sn in the early stages of ageing of Al-1.7at.%Cu-0.01at.%Sn

L. Bourgeois, T. Wong, X. Y. Xiong, J. F. Nie, B. C. Muddle

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

10 Citations (Scopus)


The interaction between vacancies and Sn and Cu solute atoms in an Al-1.7at.%Cu0.01at.%Sn alloy was investigated by exploring the effect of incorporating natural ageing into conventional age hardening treatment. It was found that provided the artificial ageing temperature does not exceed a critical value between 160°C and 200°C, a narrow window of natural ageing (3-100 h) will result in a significant acceleration of the age hardening response and no decrease in peak hardness. Transmission electron microscopy showed that this effect reflects a large and rapid increase in number density of Cu GP(I) zones, and, to a lesser extent, of θ″. The distribution and number density of θ′ are essentially unaffected. Three-dimensional atom probe provided strong evidence that refinement of GP(I) zone distribution is not due to clustering of Cu atoms onto pre-existing Sn clusters. Instead it appears to be caused by a subtle interaction between vacancies, Sn and Cu atoms.

Original languageEnglish
Title of host publicationAluminium Alloys 2006
Subtitle of host publicationResearch Through Innovation and Technology - Proceedings of the 10th International Conference on Aluminium Alloys
EditorsW J Poole, M A Wells, D J Lloyd
Place of PublicationSwitzerland
PublisherTrans Tech Publications
Number of pages6
EditionPART 1
ISBN (Print)9780878494088
Publication statusPublished - 1 Dec 2006
EventInternational Conference on Aluminium Alloys (ICAA) 2006 - Vancouver, Canada
Duration: 9 Jul 200613 Jul 2006
Conference number: 10th

Publication series

NameMaterials Science Forum
NumberPART 1
ISSN (Print)0255-5476


ConferenceInternational Conference on Aluminium Alloys (ICAA) 2006
Abbreviated titleICAA 2006


  • 3D atom probe
  • Al-Cu
  • Microalloying
  • Natural ageing
  • Transmission electron microscopy

Cite this