Integration of quantum dot devices by selective area epitaxy

S. Mokkapati; H. H. Tan; C. Jagadish; K. E. McBean; M. R. Phillips

doi:10.1109/ICONN.2006.340648

Integration of quantum dot devices by selective area epitaxy

S. Mokkapati, H. H. Tan, C. Jagadish, K. E. McBean, M. R. Phillips

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

Abstract

The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO₂) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide.

Original language	English
Title of host publication	Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	442-445
Number of pages	4
ISBN (Print)	1424404533, 9781424404537
DOIs	https://doi.org/10.1109/ICONN.2006.340648
Publication status	Published - 1 Dec 2006
Externally published	Yes
Event	International Conference on Nanoscience and Nanotechnology (ICONN) 2006 - Brisbane, Australia Duration: 3 Jul 2006 → 6 Jul 2006 Conference number: 1st

Conference

Conference	International Conference on Nanoscience and Nanotechnology (ICONN) 2006
Abbreviated title	ICONN 2006
Country/Territory	Australia
City	Brisbane
Period	3/07/06 → 6/07/06

Keywords

Integrated optoelectronic devices
Quantum dots
Selective area epitaxy

Access to Document

10.1109/ICONN.2006.340648

Cite this

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title = "Integration of quantum dot devices by selective area epitaxy",

abstract = "The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide.",

keywords = "Integrated optoelectronic devices, Quantum dots, Selective area epitaxy",

author = "S. Mokkapati and Tan, \{H. H.\} and C. Jagadish and McBean, \{K. E.\} and Phillips, \{M. R.\}",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/ICONN.2006.340648",

language = "English",

isbn = "1424404533",

pages = "442--445",

booktitle = "Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States of America",

note = "International Conference on Nanoscience and Nanotechnology (ICONN) 2006, ICONN 2006 ; Conference date: 03-07-2006 Through 06-07-2006",

}

Mokkapati, S, Tan, HH, Jagadish, C, McBean, KE & Phillips, MR 2006, Integration of quantum dot devices by selective area epitaxy. in Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN. IEEE, Institute of Electrical and Electronics Engineers, pp. 442-445, International Conference on Nanoscience and Nanotechnology (ICONN) 2006, Brisbane, Queensland, Australia, 3/07/06. https://doi.org/10.1109/ICONN.2006.340648

TY - GEN

T1 - Integration of quantum dot devices by selective area epitaxy

AU - Mokkapati, S.

AU - Tan, H. H.

AU - Jagadish, C.

AU - McBean, K. E.

AU - Phillips, M. R.

N1 - Conference code: 1st

PY - 2006/12/1

Y1 - 2006/12/1

N2 - The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide.

AB - The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide.

KW - Integrated optoelectronic devices

KW - Quantum dots

KW - Selective area epitaxy

UR - http://www.scopus.com/inward/record.url?scp=48749099121&partnerID=8YFLogxK

U2 - 10.1109/ICONN.2006.340648

DO - 10.1109/ICONN.2006.340648

M3 - Conference Paper

AN - SCOPUS:48749099121

SN - 1424404533

SN - 9781424404537

SP - 442

EP - 445

BT - Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

PB - IEEE, Institute of Electrical and Electronics Engineers

T2 - International Conference on Nanoscience and Nanotechnology (ICONN) 2006

Y2 - 3 July 2006 through 6 July 2006

ER -

Integration of quantum dot devices by selective area epitaxy

Abstract

Conference

Keywords

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