Integration of quantum dot devices by selective area epitaxy

S. Mokkapati, H. H. Tan, C. Jagadish, K. E. McBean, M. R. Phillips

Research output: Chapter in Book/Report/Conference proceedingConference PaperOther

Abstract

The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide.

Original languageEnglish
Title of host publicationProceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN
Pages442-445
Number of pages4
DOIs
Publication statusPublished - 1 Dec 2006
Externally publishedYes
Event2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006 - Brisbane, Australia
Duration: 3 Jul 20066 Jul 2006

Publication series

NameProceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

Conference

Conference2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006
CountryAustralia
CityBrisbane
Period3/07/066/07/06

Keywords

  • Integrated optoelectronic devices
  • Quantum dots
  • Selective area epitaxy

Cite this

Mokkapati, S., Tan, H. H., Jagadish, C., McBean, K. E., & Phillips, M. R. (2006). Integration of quantum dot devices by selective area epitaxy. In Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN (pp. 442-445). [4143428] (Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN). https://doi.org/10.1109/ICONN.2006.340648