Integration of quantum dot devices by selective area epitaxy

S. Mokkapati, H. H. Tan, C. Jagadish, K. E. McBean, M. R. Phillips

Research output: Chapter in Book/Report/Conference proceedingConference PaperOther

Abstract

The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide.

Original languageEnglish
Title of host publicationProceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN
Pages442-445
Number of pages4
DOIs
Publication statusPublished - 1 Dec 2006
Externally publishedYes
EventInternational Conference on Nanoscience and Nanotechnology (ICONN) 2006 - Brisbane, Australia
Duration: 3 Jul 20066 Jul 2006
Conference number: 1st

Publication series

NameProceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

Conference

ConferenceInternational Conference on Nanoscience and Nanotechnology (ICONN) 2006
Abbreviated titleICONN 2006
Country/TerritoryAustralia
CityBrisbane
Period3/07/066/07/06

Keywords

  • Integrated optoelectronic devices
  • Quantum dots
  • Selective area epitaxy

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