Integration of quantum dot devices by selective area epitaxy

S. Mokkapati; H. H. Tan; C. Jagadish; K. E. McBean; M. R. Phillips

doi:10.1109/ICONN.2006.340648

Integration of quantum dot devices by selective area epitaxy

S. Mokkapati, H. H. Tan, C. Jagadish, K. E. McBean, M. R. Phillips

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

Abstract

The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO₂) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide.

Original language	English
Title of host publication	Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN
Pages	442-445
Number of pages	4
DOIs	https://doi.org/10.1109/ICONN.2006.340648
Publication status	Published - 1 Dec 2006
Externally published	Yes
Event	International Conference on Nanoscience and Nanotechnology (ICONN) 2006 - Brisbane, Australia Duration: 3 Jul 2006 → 6 Jul 2006 Conference number: 1st

Conference

Conference	International Conference on Nanoscience and Nanotechnology (ICONN) 2006
Abbreviated title	ICONN 2006
Country/Territory	Australia
City	Brisbane
Period	3/07/06 → 6/07/06

Keywords

Integrated optoelectronic devices
Quantum dots
Selective area epitaxy

Access to Document

10.1109/ICONN.2006.340648

Cite this

@inproceedings{f8c5eb34d5ed46cb9e3a58251aa210fb,

title = "Integration of quantum dot devices by selective area epitaxy",

abstract = "The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide.",

keywords = "Integrated optoelectronic devices, Quantum dots, Selective area epitaxy",

author = "S. Mokkapati and Tan, {H. H.} and C. Jagadish and McBean, {K. E.} and Phillips, {M. R.}",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/ICONN.2006.340648",

language = "English",

isbn = "1424404533",

pages = "442--445",

booktitle = "Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN",

note = "International Conference on Nanoscience and Nanotechnology (ICONN) 2006, ICONN 2006 ; Conference date: 03-07-2006 Through 06-07-2006",

}

Mokkapati, S, Tan, HH, Jagadish, C, McBean, KE & Phillips, MR 2006, Integration of quantum dot devices by selective area epitaxy. in Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN., 4143428, pp. 442-445, International Conference on Nanoscience and Nanotechnology (ICONN) 2006, Brisbane, Queensland, Australia, 3/07/06. https://doi.org/10.1109/ICONN.2006.340648

TY - GEN

T1 - Integration of quantum dot devices by selective area epitaxy

AU - Mokkapati, S.

AU - Tan, H. H.

AU - Jagadish, C.

AU - McBean, K. E.

AU - Phillips, M. R.

N1 - Conference code: 1st

PY - 2006/12/1

Y1 - 2006/12/1

N2 - The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide.

AB - The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide.

KW - Integrated optoelectronic devices

KW - Quantum dots

KW - Selective area epitaxy

UR - http://www.scopus.com/inward/record.url?scp=48749099121&partnerID=8YFLogxK

U2 - 10.1109/ICONN.2006.340648

DO - 10.1109/ICONN.2006.340648

M3 - Conference Paper

AN - SCOPUS:48749099121

SN - 1424404533

SN - 9781424404537

SP - 442

EP - 445

BT - Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

T2 - International Conference on Nanoscience and Nanotechnology (ICONN) 2006

Y2 - 3 July 2006 through 6 July 2006

ER -

Integration of quantum dot devices by selective area epitaxy

Abstract

Conference

Keywords

Access to Document

Other files and links

Cite this