Integration of an InGaAs quantum-dot laser with a low-loss passive waveguide using selective-area epitaxy

S. Mokkapati, H. H. Tan, C. Jagadish

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Abstract

An InGaAs quantum-dot (QD) laser integrated with a low- losswaveguideisdemonstrated. Selective-areaepitaxy isusedto simultaneously form the QDs that form the active region of the laser and quantum wells (QWs) that form the waveguide section of the integrated devices.Thelosses in the activeand passive sections of the integrated devices are 6 and 3 cm-1, respectively. Very low losses in the waveguide section are due to a large difference of 200 meV in the bandgap energies of the selectively grown QDs and QWs.

Original languageEnglish
Pages (from-to)1648-1650
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number15
DOIs
Publication statusPublished - 1 Aug 2006
Externally publishedYes

Keywords

  • Integrated optoelectronics
  • Quantum dots (QDs)
  • Selective-area epitaxy (SAE)
  • Semiconductor lasers

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