N-Bromosuccinimide as a p-type dopant for a Spiro-OMeTAD hole transport material to enhance the performance of perovskite solar cells

Siqi Pan, Xichuan Yang, Bin Cai, Kaiyuan Yang, Mingyao Ge, Tian Zhang, Haiyang Cui, Licheng Sun, Wenxi Ji

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6 Citations (Scopus)

Abstract

Low costN-bromosuccinimide (NBS) was applied as an effective p-type dopant in 2,2′,7,7′-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9-spirobifluorene (Spiro-OMeTAD), an important hole transport material (HTM) for perovskite solar cells (PSCs). At the optimum doping concentration, the hole mobility, conductivity, stability, and various performances of the devices were significantly improved, particularly the hole mobility increased by more than 3.5 times from 1.39 × 10−4cm2V−1s−1to 4.92 × 10−4cm2V−1s−1. This dopant prompted the power conversion efficiency (PCE) of the PSC device from 16.12% to 19.24% (0.1 cm2, AM 1.5G, 100 mW cm−2) with high stability.

Original languageEnglish
Pages (from-to)2294-2300
Number of pages7
JournalSustainable Energy & Fuels
Volume5
Issue number8
DOIs
Publication statusPublished - 21 Apr 2021
Externally publishedYes

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