Abstract
Reflection-absorption infrared spectroscopy of the model interface derived from H10Si10O15 on Si(100)-2×1 is presented. The spectra obtained are compared to the H8Si8O12-derived model interface and discussed in terms of the soft X-ray photoemission spectroscopy obtained for cluster-derived interfaces.
Original language | English |
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Pages (from-to) | 6014-6017 |
Number of pages | 4 |
Journal | Inorganic Chemistry |
Volume | 37 |
Issue number | 23 |
Publication status | Published - 1 Dec 1998 |
Externally published | Yes |