Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors

Hongping Yan, Torben Schuettfort, Auke J. Kronemeijer, Christopher R. McNeill, Harald Ade

Materials Science & Engineering

Research output: Contribution to journal › Article › Other › peer-review

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2012

Erratum: "Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors" (Applied Physics Letters (2012) 101 (093308))
Yan, H., Schuettfort, T., Kronemeijer, A. J., McNeill, C. R. & Ade, H. W., 22 Oct 2012, In: Applied Physics Letters. 101, 17, 1 p., 179901.
Research output: Contribution to journal › Comment / Debate › Other › peer-review