Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors

Hongping Yan, Torben Schuettfort, Auke J. Kronemeijer, Christopher R. McNeill, Harald Ade

Research output: Contribution to journal › Article › Other › peer-review

22 Citations (Scopus)

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title = "Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors",

author = "Hongping Yan and Torben Schuettfort and Kronemeijer, \{Auke J.\} and McNeill, \{Christopher R.\} and Harald Ade",

year = "2012",

doi = "10.1063/1.4748976",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors

AU - Yan, Hongping

AU - Schuettfort, Torben

AU - Kronemeijer, Auke J.

AU - McNeill, Christopher R.

AU - Ade, Harald

PY - 2012

Y1 - 2012

UR - https://www.scopus.com/pages/publications/84865852752

U2 - 10.1063/1.4748976

DO - 10.1063/1.4748976

M3 - Article

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -