Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors

Hongping Yan, Torben Schuettfort, Auke J. Kronemeijer, Christopher R. McNeill, Harald Ade

Research output: Contribution to journalArticleOtherpeer-review

20 Citations (Scopus)
Original languageEnglish
Number of pages4
JournalApplied Physics Letters
Volume101
Issue number9
DOIs
Publication statusPublished - 2012

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