In situ transmission electron microscopy studies of silicide-mediated crystallization of amorphous silicon

C. Hayzelden, J. L. Batstone, R. C. Cammarata

Research output: Contribution to journalArticleResearchpeer-review

109 Citations (Scopus)


The silicide-mediated phase transformation of amorphous to crystalline silicon was observed in situ in the transmission electron microscope. Crystallization of nickel-implanted amorphous silicon occurred at ∼500°C. Nickel disilicide precipitates were observed to migrate through an amorphous Si film leaving a trail of crystalline Si. Growth occurred parallel to 〈111〉 directions. High resolution electron microscopy revealed an epitaxial NiSi2/Si(111) interface which was Type A. A diffusion-controlled mechanism for the enhanced crystallization rate was determined.

Original languageEnglish
Pages (from-to)225-227
Number of pages3
JournalApplied Physics Letters
Issue number2
Publication statusPublished - 1 Dec 1992
Externally publishedYes

Cite this