In situ transmission electron microscopy studies of silicide-mediated crystallization of amorphous silicon

C. Hayzelden, J. L. Batstone, R. C. Cammarata

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Abstract

The silicide-mediated phase transformation of amorphous to crystalline silicon was observed in situ in the transmission electron microscope. Crystallization of nickel-implanted amorphous silicon occurred at ∼500°C. Nickel disilicide precipitates were observed to migrate through an amorphous Si film leaving a trail of crystalline Si. Growth occurred parallel to 〈111〉 directions. High resolution electron microscopy revealed an epitaxial NiSi2/Si(111) interface which was Type A. A diffusion-controlled mechanism for the enhanced crystallization rate was determined.

Original languageEnglish
Pages (from-to)225-227
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number2
DOIs
Publication statusPublished - 1 Dec 1992
Externally publishedYes

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