In situ crystallization of amorphous silicon in the transmission electron microscope

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Amorphous Si thin films have been crystallized by in situ annealing in the transmission electron microscope. Crystallization occurred at about 700°C in electron-beam-deposited Si films, 400 Å thick, on amorphous Si3N4 substrates. Dendritic Si crystallites were observed with ⟨110⟩ and ⟨111⟩ orientations. The fast growth direction was parallel to ⟨112⟩. All crystallites were internally twinned with Σ = 3, (111) twin boundaries providing nucleation sites for atom attachment. The amorphous-crystal interface propagation was recorded on videotape to study the mechanism of crystallization. Interface velocities were measured at several temperatures and an activation energy of 3·36±0·23 eV was obtained for crystal growth.

Original languageEnglish
Pages (from-to)51-72
Number of pages22
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Issue number1
Publication statusPublished - Jan 1993
Externally publishedYes

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