Improvement the Q-factor of multi-band inductor with 90μm silicon substrate on plastic

H. M. Chang, H. L. Kao, S. P. Shih, Y. C. Lee, C. Y. Ke, L. C. Chang, C. H. Wu, Jeffrey S. Fu, Nemai C. Karmakar

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Abstract

This paper presents the multi-band inductor with 0.18 μm CMOS technology on plastic achieves high Q-factor and small size for multiband applications. The multi-band inductor on VLSI-standard Si Substrate is operated at ultra-wide band range. The operation frequencies are near 3 GHz, 4 GHz, 7.5 GHz and 9 GHz of the Q-factor are 6.5, 6.7, 8 and 11.5 with the inductance 2.1, 1.6, 1.1, 0.6 nH, respectively. After thinning-down the Si substrate to 90 μm and mounting on plastic, the Q-factor can improve 25∼31% without changing the inductance due to reducing the parasitic effect from Si-substrate.

Original languageEnglish
Title of host publication2010 International Symposium on Signals, Systems and Electronics, ISSSE2010 - Proceedings
Pages235-238
Number of pages4
Volume1
DOIs
Publication statusPublished - 2010
Event2010 International Symposium on Signals, Systems and Electronics, ISSSE2010 - Nanjing, China
Duration: 17 Sep 201020 Sep 2010

Conference

Conference2010 International Symposium on Signals, Systems and Electronics, ISSSE2010
CountryChina
CityNanjing
Period17/09/1020/09/10

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