This paper presents the multi-band inductor with 0.18 μm CMOS technology on plastic achieves high Q-factor and small size for multiband applications. The multi-band inductor on VLSI-standard Si Substrate is operated at ultra-wide band range. The operation frequencies are near 3 GHz, 4 GHz, 7.5 GHz and 9 GHz of the Q-factor are 6.5, 6.7, 8 and 11.5 with the inductance 2.1, 1.6, 1.1, 0.6 nH, respectively. After thinning-down the Si substrate to 90 μm and mounting on plastic, the Q-factor can improve 25∼31% without changing the inductance due to reducing the parasitic effect from Si-substrate.
|Title of host publication||2010 International Symposium on Signals, Systems and Electronics, ISSSE2010 - Proceedings|
|Number of pages||4|
|Publication status||Published - 2010|
|Event||2010 International Symposium on Signals, Systems and Electronics, ISSSE2010 - Nanjing, China|
Duration: 17 Sep 2010 → 20 Sep 2010
|Conference||2010 International Symposium on Signals, Systems and Electronics, ISSSE2010|
|Period||17/09/10 → 20/09/10|