Imperfect oriented attachment: Dislocation generation in defect-free nanocrystals

R. Lee Penn, Jillian F. Banfield

Research output: Contribution to journalArticleResearchpeer-review

1105 Citations (Scopus)

Abstract

Dislocations are common defects in solids, yet all crystals begin as dislocation-free nuclei. The mechanisms by which dislocations form during early growth are poorly understood. When nanocrystalline materials grow by oriented attachment at crystallographically specific surfaces and there is a small misorientation at the interface, dislocations result. Spiral growth at two or more closely spaced screw dislocations provides a mechanism for generating complex polytypic and polymorphic structures. These results are of fundamental importance to understanding crystal growth.

Original languageEnglish
Pages (from-to)969-971
Number of pages3
JournalScience
Volume281
Issue number5379
DOIs
Publication statusPublished - 14 Aug 1998
Externally publishedYes

Cite this