III-V semiconductor nanowires for optoelectronic device applications

Sudha Mokkapati, Nian Jiang, Dhruv Saxena, Patrick Parkinson, Qiang Gao, Hark Hoe Tan, Chennupati Jagadish

Research output: Chapter in Book/Report/Conference proceedingConference PaperOther

1 Citation (Scopus)

Abstract

III-V semiconductor nanowires are promising candidates for optoelectronic device applications due to their unique one dimensional geometry. High quantum efficiency, defined as QE=τnr/(τnrr), where τnr is the non-radiative lifetime and τr is the radiative lifetime of minority carriers in the nanowires is necessary for device applications. Due to the large surface area to volume ratio in the nanowires, non-radiative recombination associated with surface states often results in low quantum efficiency. The quantum efficiency of the nanowires can be increased either by increasing τnr or by reducing τr. We present experimental results on these two different approaches to increase the quantum efficiency of semiconductor nanowires.

Original languageEnglish
Title of host publication2013 International Conference on Microwave and Photonics, ICMAP 2013
DOIs
Publication statusPublished - 1 Dec 2013
Externally publishedYes
EventInternational Conference on Microwave and Photonics (ICMAP) 2013 - Dhanbad, Jharkhand, India
Duration: 13 Dec 201315 Dec 2013

Publication series

Name2013 International Conference on Microwave and Photonics, ICMAP 2013

Conference

ConferenceInternational Conference on Microwave and Photonics (ICMAP) 2013
Abbreviated titleICMAP 2013
CountryIndia
CityDhanbad, Jharkhand
Period13/12/1315/12/13

Keywords

  • core-shell-cap nanowires
  • GaAs nanowires
  • III-V semiconductor nanowires
  • plasmonic nanowires
  • quantum efficiency

Cite this