III-V nanowires for optoelectronic applications

H. H. Tan; N. Jiang; D. Saxena; Y. H. Lee; S. Mokkapati; L. Fu; Q. Gao; H. J. Joyce; C. Jagadish

doi:10.1149/05807.0093ecst

III-V nanowires for optoelectronic applications

H. H. Tan, N. Jiang, D. Saxena, Y. H. Lee, S. Mokkapati, L. Fu, Q. Gao, H. J. Joyce, C. Jagadish

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research › peer-review

Abstract

We present an overview of our work on improving the crystal quality and carrier lifetimes of our GaAs-based nanowires. These two properties are crucial for optoelectronic device applications and which we report by showing two examples of nanowire lasers and nanowire solar cells.

Original language	English
Title of host publication	Semiconductors, Dielectrics, and Metals for Nanoelectronics 11
Publisher	Electrochemical Society Inc.
Pages	93-98
Number of pages	6
Volume	58
Edition	7
DOIs	https://doi.org/10.1149/05807.0093ecst
Publication status	Published - 1 Jan 2013
Externally published	Yes

Publication series

Name	ECS Transactions
Publisher	Electrochemical Society Inc.
ISSN (Print)	1938-5862

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10.1149/05807.0093ecst

Cite this

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title = "III-V nanowires for optoelectronic applications",

abstract = "We present an overview of our work on improving the crystal quality and carrier lifetimes of our GaAs-based nanowires. These two properties are crucial for optoelectronic device applications and which we report by showing two examples of nanowire lasers and nanowire solar cells.",

author = "Tan, \{H. H.\} and N. Jiang and D. Saxena and Lee, \{Y. H.\} and S. Mokkapati and L. Fu and Q. Gao and Joyce, \{H. J.\} and C. Jagadish",

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AU - Tan, H. H.

AU - Jiang, N.

AU - Saxena, D.

AU - Lee, Y. H.

AU - Mokkapati, S.

AU - Fu, L.

AU - Gao, Q.

AU - Joyce, H. J.

AU - Jagadish, C.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - We present an overview of our work on improving the crystal quality and carrier lifetimes of our GaAs-based nanowires. These two properties are crucial for optoelectronic device applications and which we report by showing two examples of nanowire lasers and nanowire solar cells.

AB - We present an overview of our work on improving the crystal quality and carrier lifetimes of our GaAs-based nanowires. These two properties are crucial for optoelectronic device applications and which we report by showing two examples of nanowire lasers and nanowire solar cells.

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DO - 10.1149/05807.0093ecst

M3 - Conference Paper

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T3 - ECS Transactions

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EP - 98

BT - Semiconductors, Dielectrics, and Metals for Nanoelectronics 11

PB - Electrochemical Society Inc.

ER -

III-V nanowires for optoelectronic applications

Abstract

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