@inproceedings{c4463a9e134642668781655b52c18b86,
title = "III-V nanowires for optoelectronic applications",
abstract = "We present an overview of our work on improving the crystal quality and carrier lifetimes of our GaAs-based nanowires. These two properties are crucial for optoelectronic device applications and which we report by showing two examples of nanowire lasers and nanowire solar cells.",
author = "Tan, {H. H.} and N. Jiang and D. Saxena and Lee, {Y. H.} and S. Mokkapati and L. Fu and Q. Gao and Joyce, {H. J.} and C. Jagadish",
year = "2013",
month = jan,
day = "1",
doi = "10.1149/05807.0093ecst",
language = "English",
volume = "58",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
pages = "93--98",
booktitle = "Semiconductors, Dielectrics, and Metals for Nanoelectronics 11",
edition = "7",
}