Identification of intra-grain and grain boundary defects in polycrystalline si thin films by electron paramagnetic resonance

Tobias Sontheimer, Alexander Schnegg, Simon Steffens, Florian Ruske, Daniel Amkreutz, Klaus Lips, Bernd Rech

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13 Citations (Scopus)


We investigate the characteristics of intra-grain and grain boundary defects in polycrystalline Si films, by employing quantitative electron paramagnetic resonance measurements on liquid phase crystallized layers with an average grain size of 200 μm and tailored solid phase crystallized Si layers with similar intra-grain morphology but systematically varied grain sizes between 0.25 μm and 1 μm. The defect characteristics are found to be composed of two distinctive g -values of g = 2.0055 and 2.0032, which are attributed to grain boundary defects and intra-grain defects, respectively. Additional hydrogenation leads to a reduction of the overall defect concentration, while a rapid thermal annealing process primarily heals intra-grain defects.

Original languageEnglish
Pages (from-to)959-962
Number of pages4
JournalPhysica Status Solidi - Rapid Research Letters
Issue number11
Publication statusPublished - Nov 2013
Externally publishedYes


  • Defects
  • Electron paramagnetic resonance
  • Polycrystalline materials
  • Silicon
  • Solar cells
  • Thin films

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