Hydrogen distribution in the vicinity of dangling bonds in hydrogenated amorphous silicon (a-Si: H)

Matthias Fehr, A. Schnegg, Christian Teutloff, Robert Bittl, Oleksandr Astakhov, Friedhelm Finger, B. Rech, K. Lips

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Abstract

We have investigated the distribution of H atoms around native dangling bonds in a-Si:H by electron-nuclear double resonance (ENDOR). In contrast to previous electron spin echo envelope modulation (ESEEM) studies [Isoya et al., Phys. Rev. B 47(12), 7013-7024 (1993)] we find that the distance between H atoms and dangling-bond defects can be well below r = 3Å . Our experimental data suggest that the H distribution is continuous and homogeneous and there is no indication for a short-range order between H atoms and dangling bonds. This work is a first step toward the investigation of the H distribution around lightinduced defects to test models predicting the immediate proximity of H and defects.

Original languageEnglish
Pages (from-to)552-555
Number of pages4
JournalPhysica Status Solidi (A) - Applications and Materials Science
Volume207
Issue number3
DOIs
Publication statusPublished - Mar 2010
Externally publishedYes

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