Hot-electron induced impact-ionisation damage at the interface of sub-micron silicon MOS devices: Model and monitor

A G M Das

Research output: Contribution to journal › Article › Research › peer-review

Cite this

@article{7c85f096540c487cad9a2b54112a0cf8,

title = "Hot-electron induced impact-ionisation damage at the interface of sub-micron silicon MOS devices: Model and monitor",

author = "Das, \{A G M\}",

year = "2009",

language = "English",

volume = "404",

pages = "4393 -- 4396",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "22",

}