Hot-electron induced impact-ionisation damage at the interface of sub-micron silicon MOS devices: Model and monitor

A G M Das

    Research output: Contribution to journalArticleResearchpeer-review

    Original languageEnglish
    Pages (from-to)4393 - 4396
    Number of pages4
    JournalPhysica B: Condensed Matter
    Volume404
    Issue number22
    Publication statusPublished - 2009

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