Original language | English |
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Pages (from-to) | 4393 - 4396 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 404 |
Issue number | 22 |
Publication status | Published - 2009 |
Hot-electron induced impact-ionisation damage at the interface of sub-micron silicon MOS devices: Model and monitor
A G M Das
Research output: Contribution to journal › Article › Research › peer-review