Hooge's constant for carbon nanotube field effect transistors

Masa Ishigami; J. H. Chen; E. D. Williams; David Tobias; Y. F. Chen; M. S. Fuhrer

doi:10.1063/1.2206685

Hooge's constant for carbon nanotube field effect transistors

Masa Ishigami, J. H. Chen, E. D. Williams, David Tobias, Y. F. Chen, M. S. Fuhrer

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Abstract

The 1f noise in individual semiconducting carbon nanotubes (s-CNT) in a field effect transistor configuration has been measured in ultrahigh vacuum and following exposure to air. The amplitude of the normalized current spectral noise density is independent of source-drain current and inversely proportional to gate voltage, to channel length, and therefore to carrier number, indicating that the noise is due to mobility rather than number fluctuations. Hooge's constant for s-CNT is found to be (9.3±0.4) × 10-3 The magnitude of the 1f noise is substantially decreased by exposing the devices to air.

Original language	English
Article number	203116
Journal	Applied Physics Letters
Volume	88
Issue number	20
DOIs	https://doi.org/10.1063/1.2206685
Publication status	Published - 15 May 2006
Externally published	Yes

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abstract = "The 1f noise in individual semiconducting carbon nanotubes (s-CNT) in a field effect transistor configuration has been measured in ultrahigh vacuum and following exposure to air. The amplitude of the normalized current spectral noise density is independent of source-drain current and inversely proportional to gate voltage, to channel length, and therefore to carrier number, indicating that the noise is due to mobility rather than number fluctuations. Hooge's constant for s-CNT is found to be (9.3±0.4) × 10-3 The magnitude of the 1f noise is substantially decreased by exposing the devices to air.",

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AU - Ishigami, Masa

AU - Chen, J. H.

AU - Williams, E. D.

AU - Tobias, David

AU - Chen, Y. F.

AU - Fuhrer, M. S.

PY - 2006/5/15

Y1 - 2006/5/15

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AB - The 1f noise in individual semiconducting carbon nanotubes (s-CNT) in a field effect transistor configuration has been measured in ultrahigh vacuum and following exposure to air. The amplitude of the normalized current spectral noise density is independent of source-drain current and inversely proportional to gate voltage, to channel length, and therefore to carrier number, indicating that the noise is due to mobility rather than number fluctuations. Hooge's constant for s-CNT is found to be (9.3±0.4) × 10-3 The magnitude of the 1f noise is substantially decreased by exposing the devices to air.

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Hooge's constant for carbon nanotube field effect transistors

Abstract

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