TY - JOUR
T1 - Highly efficient layer-by-layer deposition solar cells achieved with halogen-free solvents and molecular engineering of non-fullerene acceptors
AU - Gokulnath, Thavamani
AU - Durga Gayathri, Rajalapati
AU - Park, Ho Yeol
AU - Kim, Jeonghyeon
AU - Kim, Hyerin
AU - Kim, Jehan
AU - Sudhaker Reddy, Saripally
AU - Yoon, Jinhwan
AU - Jin, Sung Ho
N1 - Funding Information:
This work was supported by the National Research Foundation (NRF- 2018R1A5A1025594 ) by the Ministry of Science, ICT of South Korea.
Publisher Copyright:
© 2022
PY - 2022/11/15
Y1 - 2022/11/15
N2 - Chemical modifications of non-fullerene acceptors (NFAs) and halogen-free solvent processes play vital roles in developing organic solar cells (OSCs). This study developed two new, halogen-free solvent-processable NFAs (BTA-UD-4F and BTA-4F) with and without an undecyl chain on the thienothiophene moiety based on the n-hexyl side chain on benzotriazole moiety. Thus, affording high performance OSCs with a halogen-free solvent (o-xylene) processed active layers. BTA-UD-4F (PM6:BTA-UD-4F, efficiency: 14.32%) achieved a higher absorption co-efficient, charge carrier mobility, enhanced solubility, suppressed charge recombination, and good compatibility with the host blend (PM6:Y7, efficiency:15.10%) compared to BTA-4F (PM6:BTA-4F, efficiency:9.41%). Moreover, BTA-UD-4F achieved an impressive power conversion efficiency (PCE) of 17.55% and an open-circuit voltage (Voc), short-circuit current density (Jsc), and fill factor (FF) of 0.85 V, 27.40 mA/cm2, and 75.18%, respectively, by the ternary layer-by-layer (LBL) deposition (PM6/Y7:BTA-UD-4F) OSCs, which is one of the highest PCEs halogen-free solvent processed for LBL-type OSCs. Importantly, the ternary LBL deposition devices accomplished good active layer film morphology, higher excition efficiency with halogen free solvents compared to the bulk heterojunction (BHJ) devices. In contrast, the BHJ ternary OSCs exhibited a PCE of 16.18%. Furthermore, >15% PCEs, up to > 300 nm thickness were achieved, highlighting the potential for large-area device fabrication. These results highlight the huge research potential for the LBL deposition architecture to be used for future OSCs applications.
AB - Chemical modifications of non-fullerene acceptors (NFAs) and halogen-free solvent processes play vital roles in developing organic solar cells (OSCs). This study developed two new, halogen-free solvent-processable NFAs (BTA-UD-4F and BTA-4F) with and without an undecyl chain on the thienothiophene moiety based on the n-hexyl side chain on benzotriazole moiety. Thus, affording high performance OSCs with a halogen-free solvent (o-xylene) processed active layers. BTA-UD-4F (PM6:BTA-UD-4F, efficiency: 14.32%) achieved a higher absorption co-efficient, charge carrier mobility, enhanced solubility, suppressed charge recombination, and good compatibility with the host blend (PM6:Y7, efficiency:15.10%) compared to BTA-4F (PM6:BTA-4F, efficiency:9.41%). Moreover, BTA-UD-4F achieved an impressive power conversion efficiency (PCE) of 17.55% and an open-circuit voltage (Voc), short-circuit current density (Jsc), and fill factor (FF) of 0.85 V, 27.40 mA/cm2, and 75.18%, respectively, by the ternary layer-by-layer (LBL) deposition (PM6/Y7:BTA-UD-4F) OSCs, which is one of the highest PCEs halogen-free solvent processed for LBL-type OSCs. Importantly, the ternary LBL deposition devices accomplished good active layer film morphology, higher excition efficiency with halogen free solvents compared to the bulk heterojunction (BHJ) devices. In contrast, the BHJ ternary OSCs exhibited a PCE of 16.18%. Furthermore, >15% PCEs, up to > 300 nm thickness were achieved, highlighting the potential for large-area device fabrication. These results highlight the huge research potential for the LBL deposition architecture to be used for future OSCs applications.
KW - Device stability
KW - Halogen-free solvent
KW - High efficiency
KW - LBL-type OSCs
KW - Side-chain modification
UR - http://www.scopus.com/inward/record.url?scp=85132515859&partnerID=8YFLogxK
U2 - 10.1016/j.cej.2022.137621
DO - 10.1016/j.cej.2022.137621
M3 - Article
AN - SCOPUS:85132515859
SN - 1385-8947
VL - 448
JO - Chemical Engineering Journal
JF - Chemical Engineering Journal
M1 - 137621
ER -