Highly (4 0 0) preferential ITO thin film prepared by DC sputtering with excellent conductivity and infrared reflectivity

L. Dong, Y. D. Chen, G. S. Zhu, H. R. Xu, J. J. Song, X. Y. Zhang, Y. Y. Zhao, D. L. Yan, Y. L, A. B. Yu

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Abstract

ITO (Indium Tin Oxide) thin film with a sandwich structure that comprises two layers of oxygen-poor layer and an oxygen-rich layer was deposited on glass substrates by DC sputtering using a ceramic target. The effect of structure on the photoelectric properties of the ITO thin film was investigated. The results indicated that the as-prepared ITO film with sandwich structure showed high (4 0 0) preferred orientation. Simultaneously, the ITO thin film with sandwich structure exhibited excellent optoelectronic properties, which has a low resistivity of 1.384 × 10−4 Ωcm, high visible light transmittance of 88.34% and a high IR reflectivity of 88.37%. Excellent optoelectronic properties can meet the infrared stealth requirements for aircraft windows.

Original languageEnglish
Article number126735
Number of pages4
JournalMaterials Letters
Volume260
DOIs
Publication statusPublished - 1 Feb 2020

Keywords

  • (4 0 0) preferential orientation
  • IR reflectivity
  • Photoelectric properties
  • Sputtering
  • Thin films

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