High TE-polarized optical gain from AlGaN-delta-GaN quantum well for deep UV lasers

Jing Zhang, Hongping Zhao, Nelson Tansu

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review


The use of ultra-thin GaN delta-layer in high Al-content AlGaN quantum wells leads to the strong valence subbands rearrangement, which in turn results in high TE-polarized optical gain at emission wavelength 250-300 nm.

Original languageEnglish
Title of host publication2011 Conference on Lasers and Electro-Optics
Subtitle of host publicationLaser Science to Photonic Applications, CLEO 2011
Publication statusPublished - 2011
Externally publishedYes
EventConference on Lasers and Electro-Optics 2011 - Baltimore Convention Center, Baltimore, United States of America
Duration: 1 May 20116 May 2011
https://ieeexplore.ieee.org/xpl/conhome/5876646/proceeding (Proceedings)


ConferenceConference on Lasers and Electro-Optics 2011
Abbreviated titleCLEO 2011
Country/TerritoryUnited States of America
Internet address

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