High spatial resolution mapping of partially strain-compensated SiGe:C films in the presence of postannealed defects

Aliaksandr V Darahanau, A L Benci, Andrei Yurievich Nikulin, Joanne Etheridge, James Hester, P Zaumseil

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@article{bded76ee6cb94b97a715087a3e84ed46,

title = "High spatial resolution mapping of partially strain-compensated SiGe:C films in the presence of postannealed defects",

author = "Darahanau, {Aliaksandr V} and Benci, {A L} and Nikulin, {Andrei Yurievich} and Joanne Etheridge and James Hester and P Zaumseil",

year = "2006",

doi = "10.1063/1.2201730",

language = "English",

volume = "99",

pages = "113531--1 -- 113531--6",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "11",

}

TY - JOUR

T1 - High spatial resolution mapping of partially strain-compensated SiGe:C films in the presence of postannealed defects

AU - Darahanau, Aliaksandr V

AU - Benci, A L

AU - Nikulin, Andrei Yurievich

AU - Etheridge, Joanne

AU - Hester, James

AU - Zaumseil, P

PY - 2006

Y1 - 2006

UR - http://<Go to ISI>://000238314900047

U2 - 10.1063/1.2201730

DO - 10.1063/1.2201730

M3 - Article

SN - 0021-8979

VL - 99

SP - 113531-1 - 113531-6

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -