High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics

Terry Chien Jen Yang; Keita Nomoto; Ziyun Lin; Lingfeng Wu; Binesh Puthen-Veettil; Tian Zhang; Xuguang Jia; Gavin Conibeer; Ivan Perez-Wurfl

doi:10.1109/PVSC.2015.7355967

High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics

Terry Chien Jen Yang, Keita Nomoto, Ziyun Lin, Lingfeng Wu, Binesh Puthen-Veettil, Tian Zhang, Xuguang Jia, Gavin Conibeer, Ivan Perez-Wurfl

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

1 Citation (Scopus)

Abstract

Si quantum dots or interchangeably Si nanocrystals are promising materials for all-Si tandem solar cells in next generation photovoltaics. Si QDs in this study were fabricated by annealing sputtered Si rich oxide/SiO2 (SRO/SiO2) bilayer superlattice thin-films. Advantages of high Si content SRO layers include lower resistivity and higher light absorption cross-sections which are more suitable for photovoltaic devices. However, theoretically high Si content SRO produces greater size distribution and larger Si nanocrystals which in this case slightly lowers the bandgap towards that of crystalline Si. This study investigates the properties of high Si content SRO/SiO2 bilayer superlattice thin-films and the effect of boron and phosphorus doping.

Original language	English
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	1-6
Number of pages	6
ISBN (Electronic)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7355967
Publication status	Published - 14 Dec 2015
Externally published	Yes
Event	IEEE Photovoltaic Specialists Conference 2015 - New Orleans, United States of America Duration: 14 Jun 2015 → 19 Jun 2015 Conference number: 42nd https://ieeexplore.ieee.org/xpl/conhome/7337615/proceeding (Proceedings)

Conference

Conference	IEEE Photovoltaic Specialists Conference 2015
Abbreviated title	PVSC 2015
Country/Territory	United States of America
City	New Orleans
Period	14/06/15 → 19/06/15
Internet address	https://ieeexplore.ieee.org/xpl/conhome/7337615/proceeding (Proceedings)

Keywords

Boron
Doping
Magnetron Sputtering
Phosphorus
Si Nanocrystals
Si Quantum Dots

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/PVSC.2015.7355967

Cite this

Yang, T. C. J., Nomoto, K., Lin, Z., Wu, L., Puthen-Veettil, B., Zhang, T., Jia, X., Conibeer, G., & Perez-Wurfl, I. (2015). High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 (pp. 1-6). Article 7355967 IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PVSC.2015.7355967

@inproceedings{42b96fffa3cf4bb2bde40f1e4828c8e1,

title = "High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics",

abstract = "Si quantum dots or interchangeably Si nanocrystals are promising materials for all-Si tandem solar cells in next generation photovoltaics. Si QDs in this study were fabricated by annealing sputtered Si rich oxide/SiO2 (SRO/SiO2) bilayer superlattice thin-films. Advantages of high Si content SRO layers include lower resistivity and higher light absorption cross-sections which are more suitable for photovoltaic devices. However, theoretically high Si content SRO produces greater size distribution and larger Si nanocrystals which in this case slightly lowers the bandgap towards that of crystalline Si. This study investigates the properties of high Si content SRO/SiO2 bilayer superlattice thin-films and the effect of boron and phosphorus doping.",

keywords = "Boron, Doping, Magnetron Sputtering, Phosphorus, Si Nanocrystals, Si Quantum Dots",

author = "Yang, \{Terry Chien Jen\} and Keita Nomoto and Ziyun Lin and Lingfeng Wu and Binesh Puthen-Veettil and Tian Zhang and Xuguang Jia and Gavin Conibeer and Ivan Perez-Wurfl",

year = "2015",

month = dec,

day = "14",

doi = "10.1109/PVSC.2015.7355967",

language = "English",

pages = "1--6",

booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States of America",

note = "IEEE Photovoltaic Specialists Conference 2015, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",

url = "https://ieeexplore.ieee.org/xpl/conhome/7337615/proceeding",

}

Yang, TCJ, Nomoto, K, Lin, Z, Wu, L, Puthen-Veettil, B, Zhang, T, Jia, X, Conibeer, G & Perez-Wurfl, I 2015, High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7355967, IEEE, Institute of Electrical and Electronics Engineers, pp. 1-6, IEEE Photovoltaic Specialists Conference 2015, New Orleans, Louisiana, United States of America, 14/06/15. https://doi.org/10.1109/PVSC.2015.7355967

High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics. / Yang, Terry Chien Jen; Nomoto, Keita; Lin, Ziyun et al.
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. IEEE, Institute of Electrical and Electronics Engineers, 2015. p. 1-6 7355967.

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

TY - GEN

T1 - High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics

AU - Yang, Terry Chien Jen

AU - Nomoto, Keita

AU - Lin, Ziyun

AU - Wu, Lingfeng

AU - Puthen-Veettil, Binesh

AU - Zhang, Tian

AU - Jia, Xuguang

AU - Conibeer, Gavin

AU - Perez-Wurfl, Ivan

N1 - Conference code: 42nd

PY - 2015/12/14

Y1 - 2015/12/14

N2 - Si quantum dots or interchangeably Si nanocrystals are promising materials for all-Si tandem solar cells in next generation photovoltaics. Si QDs in this study were fabricated by annealing sputtered Si rich oxide/SiO2 (SRO/SiO2) bilayer superlattice thin-films. Advantages of high Si content SRO layers include lower resistivity and higher light absorption cross-sections which are more suitable for photovoltaic devices. However, theoretically high Si content SRO produces greater size distribution and larger Si nanocrystals which in this case slightly lowers the bandgap towards that of crystalline Si. This study investigates the properties of high Si content SRO/SiO2 bilayer superlattice thin-films and the effect of boron and phosphorus doping.

AB - Si quantum dots or interchangeably Si nanocrystals are promising materials for all-Si tandem solar cells in next generation photovoltaics. Si QDs in this study were fabricated by annealing sputtered Si rich oxide/SiO2 (SRO/SiO2) bilayer superlattice thin-films. Advantages of high Si content SRO layers include lower resistivity and higher light absorption cross-sections which are more suitable for photovoltaic devices. However, theoretically high Si content SRO produces greater size distribution and larger Si nanocrystals which in this case slightly lowers the bandgap towards that of crystalline Si. This study investigates the properties of high Si content SRO/SiO2 bilayer superlattice thin-films and the effect of boron and phosphorus doping.

KW - Boron

KW - Doping

KW - Magnetron Sputtering

KW - Phosphorus

KW - Si Nanocrystals

KW - Si Quantum Dots

UR - https://www.scopus.com/pages/publications/84961572689

U2 - 10.1109/PVSC.2015.7355967

DO - 10.1109/PVSC.2015.7355967

M3 - Conference Paper

AN - SCOPUS:84961572689

SP - 1

EP - 6

BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

PB - IEEE, Institute of Electrical and Electronics Engineers

T2 - IEEE Photovoltaic Specialists Conference 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Yang TCJ, Nomoto K, Lin Z, Wu L, Puthen-Veettil B, Zhang T et al. High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. IEEE, Institute of Electrical and Electronics Engineers. 2015. p. 1-6. 7355967 doi: 10.1109/PVSC.2015.7355967

High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics

Abstract

Conference

Keywords

UN SDGs

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