High-resolution X-ray diffractometry investigation of interface layers in GaN/AIN structures grown on sapphire substrates

Stephen Thomas Mudie; Konstantin Mikhailovitch Pavlov; Michael J Morgan; Masao Tabuchi; Yoshikazu Takeda; James Hester

doi:10.1142/S0218625X03005001

High-resolution X-ray diffractometry investigation of interface layers in GaN/AIN structures grown on sapphire substrates

Stephen Thomas Mudie, Konstantin Mikhailovitch Pavlov, Michael J Morgan, Masao Tabuchi, Yoshikazu Takeda, James Hester

Materials Science & Engineering

Research output: Contribution to journal › Article › Research › peer-review

Original language	English
Pages (from-to)	513 - 517
Number of pages	5
Journal	Surface Review and Letters
Volume	10
Issue number	2 & 3
DOIs	https://doi.org/10.1142/S0218625X03005001
Publication status	Published - 2003

Access to Document

10.1142/S0218625X03005001

Cite this

@article{d8460a4059bf484abf7ab16544d2571c,

title = "High-resolution X-ray diffractometry investigation of interface layers in GaN/AIN structures grown on sapphire substrates",

author = "Mudie, {Stephen Thomas} and Pavlov, {Konstantin Mikhailovitch} and Morgan, {Michael J} and Masao Tabuchi and Yoshikazu Takeda and James Hester",

year = "2003",

doi = "10.1142/S0218625X03005001",

language = "English",

volume = "10",

pages = "513 -- 517",

journal = "Surface Review and Letters",

issn = "0218-625X",

publisher = "World Scientific Publishing",

number = "2 & 3",

}

TY - JOUR

T1 - High-resolution X-ray diffractometry investigation of interface layers in GaN/AIN structures grown on sapphire substrates

AU - Mudie, Stephen Thomas

AU - Pavlov, Konstantin Mikhailovitch

AU - Morgan, Michael J

AU - Tabuchi, Masao

AU - Takeda, Yoshikazu

AU - Hester, James

PY - 2003

Y1 - 2003

U2 - 10.1142/S0218625X03005001

DO - 10.1142/S0218625X03005001

M3 - Article

SN - 0218-625X

VL - 10

SP - 513

EP - 517

JO - Surface Review and Letters

JF - Surface Review and Letters

IS - 2 & 3

ER -