High-resolution X-ray diffractometry investigation of interface layers in GaN/AIN structures grown on sapphire substrates

Stephen Thomas Mudie, Konstantin Mikhailovitch Pavlov, Michael J Morgan, Masao Tabuchi, Yoshikazu Takeda, James Hester

Research output: Contribution to journalArticleResearchpeer-review

Original languageEnglish
Pages (from-to)513 - 517
Number of pages5
JournalSurface Review and Letters
Issue number2 & 3
Publication statusPublished - 2003

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