High resolution in situ TEM studies of silicide-mediated crystallization of amorphous silicon

C. Hayzelden, J. L. Batstone

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

5 Citations (Scopus)


We report in situ high resolution transmission electron microscopy studies of NiSi2-mediated crystallization of amorphous Si. Compared to conventional solid phase epitaxy of (111) Si, an enhancement of the growth rate by three orders of magnitude was observed and high quality twin-free needles of 〈111〉 Si were formed. Crystallization occurred via a ledge growth mechanism at the epitaxial Type A NiSi2/crystalline Si (111) interface. A model for NiSi2-mediated crystallization of amorphous Si involving the passage of kinks along 〈110〉 ledges at the NiSi2/ crystalline Si (111) interface is proposed.

Original languageEnglish
Title of host publicationCrystallization and Related Phenomena in Amorphous Materials
EditorsMatthew Libera, Tony E. Haynes, Peggy Cebe, James E. Dickinson Jr.
PublisherMaterials Research Society
Number of pages6
ISBN (Print)1558992200
Publication statusPublished - 1994
Externally publishedYes
EventMaterials Research Society Symposium (MRS) 1993 (Fall) - Boston, United States of America
Duration: 29 Nov 19933 Dec 1993

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


ConferenceMaterials Research Society Symposium (MRS) 1993 (Fall)
Abbreviated titleMRS 1993 Fall
Country/TerritoryUnited States of America

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