@inproceedings{47de0847d3a14112bd348c2c39545382,
title = "High resolution in situ TEM studies of silicide-mediated crystallization of amorphous silicon",
abstract = "We report in situ high resolution transmission electron microscopy studies of NiSi2-mediated crystallization of amorphous Si. Compared to conventional solid phase epitaxy of (111) Si, an enhancement of the growth rate by three orders of magnitude was observed and high quality twin-free needles of 〈111〉 Si were formed. Crystallization occurred via a ledge growth mechanism at the epitaxial Type A NiSi2/crystalline Si (111) interface. A model for NiSi2-mediated crystallization of amorphous Si involving the passage of kinks along 〈110〉 ledges at the NiSi2/ crystalline Si (111) interface is proposed.",
author = "C. Hayzelden and Batstone, {J. L.}",
year = "1994",
language = "English",
isbn = "1558992200",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "579--584",
editor = "Matthew Libera and Haynes, {Tony E.} and Peggy Cebe and {Dickinson Jr.}, {James E.}",
booktitle = "Crystallization and Related Phenomena in Amorphous Materials",
address = "United States of America",
note = "Materials Research Society Symposium (MRS) 1993 (Fall), MRS 1993 Fall ; Conference date: 29-11-1993 Through 03-12-1993",
}