High quantum efficiency (Al) GaAs nanowires for optoelectronic devices

S. Mokkapati; Nian Jiang; D. Saxena; H. H. Tan; C. Jagadish

doi:10.1109/SUM.2014.14

High quantum efficiency (Al) GaAs nanowires for optoelectronic devices

S. Mokkapati
, Nian Jiang
, D. Saxena
, H. H. Tan
, C. Jagadish

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

Abstract

III-V semiconductor nanowires are promising for optoelectronic device applications. Applications of GaAs nanowires however have been limited due to low quantum/radiative efficiency. We discuss two approaches to increase the quantum efficiency of (Al) GaAs nanowires.

Original language	English
Title of host publication	Proceedings - Summer Topicals Meeting Series, SUM
Place of Publication	Piscataway NJ USA
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	13-14
Number of pages	2
ISBN (Electronic)	9781479927678
DOIs	https://doi.org/10.1109/SUM.2014.14
Publication status	Published - 18 Sept 2014
Externally published	Yes
Event	IEEE Photonics Society Summer Topical Meeting Series 2014 - Montreal, Canada Duration: 14 Jul 2014 → 16 Jul 2014 https://ieeexplore.ieee.org/xpl/conhome/6898625/proceeding (Proceedings)

Publication series

Name	Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014
Publisher	Institute of Electrical and Electronics Engineers
ISSN (Print)	1099-4742
ISSN (Electronic)	2376-8614

Conference

Conference	IEEE Photonics Society Summer Topical Meeting Series 2014
Abbreviated title	SUM 2014
Country/Territory	Canada
City	Montreal
Period	14/07/14 → 16/07/14
Internet address	https://ieeexplore.ieee.org/xpl/conhome/6898625/proceeding (Proceedings)

Keywords

III-V semiconductor
nanowire
optoelectronic devices
plasmonics

Access to Document

10.1109/SUM.2014.14

Cite this

Mokkapati, S., Jiang, N., Saxena, D., Tan, H. H., & Jagadish, C. (2014). High quantum efficiency (Al) GaAs nanowires for optoelectronic devices. In Proceedings - Summer Topicals Meeting Series, SUM (pp. 13-14). Article 6902962 (Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014). IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/SUM.2014.14

@inproceedings{b25dc3c7ceb741cdaf10d7ece0eb13d7,

title = "High quantum efficiency (Al) GaAs nanowires for optoelectronic devices",

abstract = "III-V semiconductor nanowires are promising for optoelectronic device applications. Applications of GaAs nanowires however have been limited due to low quantum/radiative efficiency. We discuss two approaches to increase the quantum efficiency of (Al) GaAs nanowires.",

keywords = "III-V semiconductor, nanowire, optoelectronic devices, plasmonics",

author = "S. Mokkapati and Nian Jiang and D. Saxena and Tan, \{H. H.\} and C. Jagadish",

year = "2014",

month = sep,

day = "18",

doi = "10.1109/SUM.2014.14",

language = "English",

series = "Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

pages = "13--14",

booktitle = "Proceedings - Summer Topicals Meeting Series, SUM",

address = "United States of America",

note = "IEEE Photonics Society Summer Topical Meeting Series 2014, SUM 2014 ; Conference date: 14-07-2014 Through 16-07-2014",

url = "https://ieeexplore.ieee.org/xpl/conhome/6898625/proceeding",

}

Mokkapati, S, Jiang, N, Saxena, D, Tan, HH & Jagadish, C 2014, High quantum efficiency (Al) GaAs nanowires for optoelectronic devices. in Proceedings - Summer Topicals Meeting Series, SUM., 6902962, Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014, IEEE, Institute of Electrical and Electronics Engineers, Piscataway NJ USA, pp. 13-14, IEEE Photonics Society Summer Topical Meeting Series 2014, Montreal, Quebec, Canada, 14/07/14. https://doi.org/10.1109/SUM.2014.14

High quantum efficiency (Al) GaAs nanowires for optoelectronic devices. / Mokkapati, S.; Jiang, Nian; Saxena, D. et al.
Proceedings - Summer Topicals Meeting Series, SUM. Piscataway NJ USA: IEEE, Institute of Electrical and Electronics Engineers, 2014. p. 13-14 6902962 (Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

TY - GEN

T1 - High quantum efficiency (Al) GaAs nanowires for optoelectronic devices

AU - Mokkapati, S.

AU - Jiang, Nian

AU - Saxena, D.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2014/9/18

Y1 - 2014/9/18

N2 - III-V semiconductor nanowires are promising for optoelectronic device applications. Applications of GaAs nanowires however have been limited due to low quantum/radiative efficiency. We discuss two approaches to increase the quantum efficiency of (Al) GaAs nanowires.

AB - III-V semiconductor nanowires are promising for optoelectronic device applications. Applications of GaAs nanowires however have been limited due to low quantum/radiative efficiency. We discuss two approaches to increase the quantum efficiency of (Al) GaAs nanowires.

KW - III-V semiconductor

KW - nanowire

KW - optoelectronic devices

KW - plasmonics

UR - https://www.scopus.com/pages/publications/84908657424

U2 - 10.1109/SUM.2014.14

DO - 10.1109/SUM.2014.14

M3 - Conference Paper

AN - SCOPUS:84908657424

T3 - Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014

SP - 13

EP - 14

BT - Proceedings - Summer Topicals Meeting Series, SUM

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - Piscataway NJ USA

T2 - IEEE Photonics Society Summer Topical Meeting Series 2014

Y2 - 14 July 2014 through 16 July 2014

ER -

High quantum efficiency (Al) GaAs nanowires for optoelectronic devices

Abstract

Publication series

Conference

Keywords

Access to Document

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