High quantum efficiency (Al) GaAs nanowires for optoelectronic devices

S. Mokkapati, Nian Jiang, D. Saxena, H. H. Tan, C. Jagadish

Research output: Chapter in Book/Report/Conference proceedingConference PaperOther

Abstract

III-V semiconductor nanowires are promising for optoelectronic device applications. Applications of GaAs nanowires however have been limited due to low quantum/radiative efficiency. We discuss two approaches to increase the quantum efficiency of (Al) GaAs nanowires.

Original languageEnglish
Title of host publicationProceedings - Summer Topicals Meeting Series, SUM
Place of PublicationPiscataway NJ USA
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages13-14
Number of pages2
ISBN (Electronic)9781479927678
DOIs
Publication statusPublished - 18 Sep 2014
Externally publishedYes
EventIEEE Photonics Society Summer Topical Meeting Series 2014 - Montreal, Canada
Duration: 14 Jul 201416 Jul 2014
https://ieeexplore.ieee.org/xpl/conhome/6898625/proceeding (Proceedings)

Publication series

NameProceedings - 2014 Summer Topicals Meeting Series, SUM 2014
PublisherInstitute of Electrical and Electronics Engineers
ISSN (Print)1099-4742
ISSN (Electronic)2376-8614

Conference

ConferenceIEEE Photonics Society Summer Topical Meeting Series 2014
Abbreviated titleSUM 2014
CountryCanada
CityMontreal
Period14/07/1416/07/14
Internet address

Keywords

  • III-V semiconductor
  • nanowire
  • optoelectronic devices
  • plasmonics

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