High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits

Haisheng Song; Songlin Li; Liang Gao; Yong Xu; Kazunori Ueno; Jiang Tang; Yibing Cheng; Kazuhito Tsukagoshi

doi:10.1039/c3nr01899g

High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits

Haisheng Song, Songlin Li, Liang Gao, Yong Xu, Kazunori Ueno, Jiang Tang, Yibing Cheng, Kazuhito Tsukagoshi

Materials Science & Engineering

Research output: Contribution to journal › Article › Research › peer-review

233 Citations (Scopus)

Original language	English
Pages (from-to)	9666 - 9670
Number of pages	5
Journal	Nanoscale
Volume	5
Issue number	20
DOIs	https://doi.org/10.1039/c3nr01899g
Publication status	Published - 2013

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10.1039/c3nr01899g

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title = "High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits",

author = "Haisheng Song and Songlin Li and Liang Gao and Yong Xu and Kazunori Ueno and Jiang Tang and Yibing Cheng and Kazuhito Tsukagoshi",

year = "2013",

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language = "English",

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journal = "Nanoscale",

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T1 - High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits

AU - Song, Haisheng

AU - Li, Songlin

AU - Gao, Liang

AU - Xu, Yong

AU - Ueno, Kazunori

AU - Tang, Jiang

AU - Cheng, Yibing

AU - Tsukagoshi, Kazuhito

PY - 2013

Y1 - 2013

UR - http://dx.doi.org/10.1039/c3nr01899g

U2 - 10.1039/c3nr01899g

DO - 10.1039/c3nr01899g

M3 - Article

VL - 5

SP - 9666

EP - 9670

JO - Nanoscale

JF - Nanoscale

SN - 2040-3364

IS - 20

ER -

High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits

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