High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits

Haisheng Song, Songlin Li, Liang Gao, Yong Xu, Kazunori Ueno, Jiang Tang, Yibing Cheng, Kazuhito Tsukagoshi

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@article{77ac7ad01d414fe88ffbfa81b9d72d61,

title = "High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits",

author = "Haisheng Song and Songlin Li and Liang Gao and Yong Xu and Kazunori Ueno and Jiang Tang and Yibing Cheng and Kazuhito Tsukagoshi",

year = "2013",

doi = "10.1039/c3nr01899g",

language = "English",

volume = "5",

pages = "9666 -- 9670",

journal = "Nanoscale",

issn = "2040-3364",

publisher = "The Royal Society of Chemistry",

number = "20",

}

TY - JOUR

T1 - High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits

AU - Song, Haisheng

AU - Li, Songlin

AU - Gao, Liang

AU - Xu, Yong

AU - Ueno, Kazunori

AU - Tang, Jiang

AU - Cheng, Yibing

AU - Tsukagoshi, Kazuhito

PY - 2013

Y1 - 2013

UR - http://dx.doi.org/10.1039/c3nr01899g

U2 - 10.1039/c3nr01899g

DO - 10.1039/c3nr01899g

M3 - Article

VL - 5

SP - 9666

EP - 9670

JO - Nanoscale

JF - Nanoscale

SN - 2040-3364

IS - 20

ER -