High-performance carbon nanotube transistors on SrTiO 3/Si substrates

B. M. Kim, T. Brintlinger, E. Cobas, M. S. Fuhrer, Haimei Zheng, Z. Yu, R. Droopad, J. Ramdani, K. Eisenbeiser

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The thin SrTiO 3 was used as gate dielectric and Si as gate electrode for the fabrication of high performance semiconducting single walled carbon nanotube (SWNT) field effect trasistors. Using electron beam lithography, an alumina supported Fe/Mo catalyst was patterned in islands on the substrate. Evaporated Cr/Au electrodes were used to make drain and source contacts to the SWNT. Results show that the increased electric field at the nanotube-electrode interface due to the high-k SrTiO 3 decreases or eliminates the nanotube-electrode Schottky barrier.

Original languageEnglish
Pages (from-to)1946-1948
Number of pages3
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 15 Mar 2004
Externally publishedYes

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