High-mobility spin-polarized two-dimensional electron gas at the interface of EuTiO3/SrTiO3 heterostructures

Zhao Cai Wang, Ying Zhang, Zheng-Nan Li, Shuang-Shuang Li, Jing-Shi Ying, Wei Yan, Lei Chen, Shu-Juan Zhang, Fu-Sheng Luo, Weiyao Zhao, Mao Ye, Ren-Kui Zheng

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4 Citations (Scopus)

Abstract

Spin polarization of two-dimensional electron gas (2DEG) at the interface of EuTiO3/SrTiO3(STO) heterostructures has been theoretical predicted and experimentally observed via x-ray magnetic circular dichroism and polarized x-ray absorption spectroscopy, which, however, is lack of magnetotransport evidence. Here, we report the fabrication of high-quality EuTiO3/STO heterostructures by depositing antiferromagnetic insulating EuTiO3 thin films onto STO substrates. Shubnikov-de Haas oscillation, Hall, and magnetoresistance (MR) measurements show that the interface is not only highly conducting, with electron mobility up to 5.5 × 10 3 cm2V−1s−1 at 1.8 K, but also shows low-field hysteretic MR effects. MR of ∼9% is observed at 1.8 K and 20 Oe, which is one order of magnitude higher than those observed in other spin-polarized 2DEG oxide systems. Moreover, the heterostructures show ferromagnetic hysteresis loops. These results demonstrate that the high-mobility 2DEG is spin polarized, whose origin is attributed to the interfacial Ti3+-3d states due to oxygen deficiency and the exchange interactions between interfacial Eu spins and itinerant Ti-3d electrons.

Original languageEnglish
Article number015001
Number of pages8
JournalJournal of Physics: Condensed Matter
Volume36
Issue number1
DOIs
Publication statusPublished - 3 Oct 2023

Keywords

  • interface
  • low-field hysteretic MR
  • Shubnikov-de Haas oscillation
  • spin polarized 2DEG

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