High-mobility spin-polarized quasi-two-dimensional electron gas and large low-field magnetoresistance at the interface of EuTiO3/SrTiO3 (110) heterostructures

Zhao-Cai Wang, Zheng-Nan Li, Mao Ye, Weiyao Zhao, Ren-Kui Zheng

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Abstract

High-mobility spin-polarized two-dimensional electron gas (2DEG) at the interfaces of complex oxide heterostructures provide great potential for spintronic device applications. Unfortunately, the interfacial ferromagnetism and its associated spin polarization of mobile electrons and negative magnetoresistance (MR) are too weak. As of now, obtaining enhanced interfacial ferromagnetism and MR and strong spin-polarized 2DEG is still a great challenge. In this paper, we report on the realization of strong spin-polarized 2DEG at the interface of EuTiO3/SrTiO3 (110) heterostructures, which were prepared by directly depositing 39-nm EuTiO3 films onto as-received SrTiO3 (110) substrates. Hall and Kondo effects, low-field MR, Shubnikov-de Haas (SdH) oscillation, and magnetic hysteresis loop measurements demonstrate that high mobility electrons (1.4 × 104 cm2 V−1 s−1) accumulate at the interface of the heterostructures, which are not only highly conducting and show SdH oscillations with a non-zero Berry phase but also show a large out-of-plane and in-plane butterfly-like negative low-field MR whose magnitude is unprecedentedly large (46%-59% at 500 Oe and 1.8 K), approximately one to two orders higher than those of previously reported spin-polarized 2DEG systems. The strong spin polarization of the interfacial 2DEG is attributed to the presence of interfacial Eu2+ 4f (3.6-4 μB/f.u.) and Ti3+ 3d moments. Our results may provide guidance for exploring strong spin-polarized 2DEG at the interface of rare-earth titanate-strontium titanate heterostructures.

Original languageEnglish
Article number031107
Number of pages11
JournalAPL Materials
Volume12
Issue number3
DOIs
Publication statusPublished - Apr 2024

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