High-Mobility Nanotube Transistor Memory

M. S. Fuhrer, B. M. Kim, T. Dürkop, T. Brintlinger

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484 Citations (Scopus)


A high-mobility (9000 cm2/V·s) semiconducting single-walled nanotube transistor is used to construct a nonvolatile charge-storage memory element operating at room temperature. Charges are stored by application of a few volts across the silicon dioxide dielectric between nanotube and silicon substrate, and detected by threshold shift of the nanotube field-effect transistor. The high mobility of the nanotube transistor allows the observation of discrete configurations of charge corresponding to rearrangement of a single or few electrons. These states may be reversibly written, read, and erased at temperatures up to 100 K.

Original languageEnglish
Pages (from-to)755-759
Number of pages5
JournalNano Letters
Issue number7
Publication statusPublished - 1 Jul 2002
Externally publishedYes

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