High-Mobility Nanotube Transistor Memory

M. S. Fuhrer, B. M. Kim, T. Dürkop, T. Brintlinger

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464 Citations (Scopus)

Abstract

A high-mobility (9000 cm2/V·s) semiconducting single-walled nanotube transistor is used to construct a nonvolatile charge-storage memory element operating at room temperature. Charges are stored by application of a few volts across the silicon dioxide dielectric between nanotube and silicon substrate, and detected by threshold shift of the nanotube field-effect transistor. The high mobility of the nanotube transistor allows the observation of discrete configurations of charge corresponding to rearrangement of a single or few electrons. These states may be reversibly written, read, and erased at temperatures up to 100 K.

Original languageEnglish
Pages (from-to)755-759
Number of pages5
JournalNano Letters
Volume2
Issue number7
DOIs
Publication statusPublished - 1 Jul 2002
Externally publishedYes

Cite this

Fuhrer, M. S., Kim, B. M., Dürkop, T., & Brintlinger, T. (2002). High-Mobility Nanotube Transistor Memory. Nano Letters, 2(7), 755-759. https://doi.org/10.1021/nl025577o