Abstract
A high-mobility (9000 cm2/V·s) semiconducting single-walled nanotube transistor is used to construct a nonvolatile charge-storage memory element operating at room temperature. Charges are stored by application of a few volts across the silicon dioxide dielectric between nanotube and silicon substrate, and detected by threshold shift of the nanotube field-effect transistor. The high mobility of the nanotube transistor allows the observation of discrete configurations of charge corresponding to rearrangement of a single or few electrons. These states may be reversibly written, read, and erased at temperatures up to 100 K.
Original language | English |
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Pages (from-to) | 755-759 |
Number of pages | 5 |
Journal | Nano Letters |
Volume | 2 |
Issue number | 7 |
DOIs | |
Publication status | Published - 1 Jul 2002 |
Externally published | Yes |