High mobility ambipolar MoS2 field-effect transistors: substrate and dielectric effects

Wenzhong Bao, Xinghan Cai, Dohun Kim, Karthik Sridhara, Michael Fuhrer

Research output: Contribution to journalArticleResearchpeer-review

459 Citations (Scopus)
Original languageEnglish
Pages (from-to)1 - 4
Number of pages4
JournalApplied Physics Letters
Volume102
Issue number4
DOIs
Publication statusPublished - 2013
Externally publishedYes

Cite this

Bao, Wenzhong ; Cai, Xinghan ; Kim, Dohun ; Sridhara, Karthik ; Fuhrer, Michael. / High mobility ambipolar MoS2 field-effect transistors: substrate and dielectric effects. In: Applied Physics Letters. 2013 ; Vol. 102, No. 4. pp. 1 - 4.
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High mobility ambipolar MoS2 field-effect transistors: substrate and dielectric effects. / Bao, Wenzhong; Cai, Xinghan; Kim, Dohun; Sridhara, Karthik; Fuhrer, Michael.

In: Applied Physics Letters, Vol. 102, No. 4, 2013, p. 1 - 4.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - High mobility ambipolar MoS2 field-effect transistors: substrate and dielectric effects

AU - Bao, Wenzhong

AU - Cai, Xinghan

AU - Kim, Dohun

AU - Sridhara, Karthik

AU - Fuhrer, Michael

PY - 2013

Y1 - 2013

U2 - 10.1063/1.4789365

DO - 10.1063/1.4789365

M3 - Article

VL - 102

SP - 1

EP - 4

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

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