High-K dielectric deposition in 3D architectures: the case of Ta2O5 deposited with metal-organic precursor TBTDET

L. Pinzelli, M. Gros-Jean, Y. Bréchet, F. Volpi, A. Bajolet, J. C. Giraudin

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New applications in microelectronics need the integration of high capacitance devices. One way of this development is the integration of capacitors with 3D architecture such as trench fields. The challenge is then to deposit the dielectric material in a highly conformal way within trenches showing high aspects ratios. We have studied and modeled the conformality and the loading effect of Ta2O5 deposited by MOCVD in an analytical way.

Original languageEnglish
Pages (from-to)700-703
Number of pages4
JournalMicroelectronics Reliability
Issue number4-5 SPEC. ISS.
Publication statusPublished - Apr 2007
Externally publishedYes

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