High-K dielectric deposition in 3D architectures: the case of Ta2O5 deposited with metal-organic precursor TBTDET

L. Pinzelli; M. Gros-Jean; Y. Bréchet; F. Volpi; A. Bajolet; J. C. Giraudin

doi:10.1016/j.microrel.2007.01.066

High-K dielectric deposition in 3D architectures: the case of Ta₂O₅ deposited with metal-organic precursor TBTDET

L. Pinzelli, M. Gros-Jean, Y. Bréchet, F. Volpi, A. Bajolet, J. C. Giraudin

Research output: Contribution to journal › Article › Research › peer-review

2 Citations (Scopus)

Abstract

New applications in microelectronics need the integration of high capacitance devices. One way of this development is the integration of capacitors with 3D architecture such as trench fields. The challenge is then to deposit the dielectric material in a highly conformal way within trenches showing high aspects ratios. We have studied and modeled the conformality and the loading effect of Ta₂O₅ deposited by MOCVD in an analytical way.

Original language	English
Pages (from-to)	700-703
Number of pages	4
Journal	Microelectronics Reliability
Volume	47
Issue number	4-5 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.microrel.2007.01.066
Publication status	Published - Apr 2007
Externally published	Yes

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abstract = "New applications in microelectronics need the integration of high capacitance devices. One way of this development is the integration of capacitors with 3D architecture such as trench fields. The challenge is then to deposit the dielectric material in a highly conformal way within trenches showing high aspects ratios. We have studied and modeled the conformality and the loading effect of Ta2O5 deposited by MOCVD in an analytical way.",

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AU - Bréchet, Y.

AU - Volpi, F.

AU - Bajolet, A.

AU - Giraudin, J. C.

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AB - New applications in microelectronics need the integration of high capacitance devices. One way of this development is the integration of capacitors with 3D architecture such as trench fields. The challenge is then to deposit the dielectric material in a highly conformal way within trenches showing high aspects ratios. We have studied and modeled the conformality and the loading effect of Ta2O5 deposited by MOCVD in an analytical way.

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M3 - Article

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SN - 0026-2714

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IS - 4-5 SPEC. ISS.

ER -

High-K dielectric deposition in 3D architectures: the case of Ta2O5 deposited with metal-organic precursor TBTDET

Abstract

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High-K dielectric deposition in 3D architectures: the case of Ta₂O₅ deposited with metal-organic precursor TBTDET