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High-field magnetotransport studies of surface-conducting diamonds

Kaijian Xing, Daniel L. Creedon, Golrokh Akhgar, Steve A. Yianni, Jeffrey C. McCallum, Lothar Ley, Dong Chen Qi, Christopher I. Pakes

Research output: Contribution to journalArticleResearchpeer-review

Abstract

The observation of a strong and tunable spin-orbit interaction (SOI) in surface-conducting diamond opens up a new avenue for building diamond-based spintronics. Herein we provide a comprehensive method to analyze the magnetotransport behavior of surface-conducting hydrogen-terminated diamond (H-diamond) Hall bar devices and Al/Al2O3/V2O5/H-diamond metal-oxide semiconductor field-effect transistors, respectively. By adopting a significantly improved theoretical magnetotransport model, the reduced magnetoconductance can be accurately explained both within and outside the quantum diffusive regime. The model is valid for all doping strategies of surface-conducting diamond tested. From this analysis, we find that the orbital magnetoresistance, a classical effect distinct from the SOI, dominates the magnetotransport in surface-conducting diamond at high magnetic fields. Furthermore, local hole mobilities as high as 1000-3000cm2/Vs have been observed in this work, indicating the possibility of diamond-based electronics with ultrahigh hole mobilities at cryogenic temperatures.

Original languageEnglish
Article number245307
Number of pages8
JournalPhysical Review B
Volume105
Issue number24
DOIs
Publication statusPublished - 15 Jun 2022

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