High-fidelity rapid initialization and read-out of an electron spin via the single donor D- charge state

Thomas F Watson, Bent Weber, Matthew Gregory House, Holger Buch, Michelle Yvonne Simmons

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35 Citations (Scopus)


We demonstrate high-fidelity electron spin read-out of a precision placed single donor in silicon via spin selective tunneling to either the D+ or D− charge state of the donor. By performing read-out at the stable two electron D0↔D− charge transition we can increase the tunnel rates to a nearby single electron transistor charge sensor by nearly 2 orders of magnitude, allowing faster qubit read-out (1 ms) with minimum loss in read-out fidelity (98.4%) compared to read-out at the D+↔D0 transition (99.6%). Furthermore, we show that read-out via the D− charge state can be used to rapidly initialize the electron spin qubit in its ground state with a fidelity of FI=99.8%
Original languageEnglish
Article number166806
Pages (from-to)1-5
Number of pages5
JournalPhysical Review Letters
Issue number16
Publication statusPublished - 2015

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