Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression

Guangyu Liu, Hongping Zhao, Jing Zhang, Nelson Tansu

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Abstract

The growths of InGaN quantum wells light-emitting diodes with AlInN thin barrier were performed by metal-organic chemical vapor deposition, and this approach led to reduction in thermionic carrier escape and efficiency droop.

Original languageEnglish
Title of host publication2011 Conference on Lasers and Electro-Optics
Subtitle of host publicationLaser Science to Photonic Applications, CLEO 2011
Publication statusPublished - 2011
Externally publishedYes
EventConference on Lasers and Electro-Optics 2011 - Baltimore Convention Center, Baltimore, United States of America
Duration: 1 May 20116 May 2011
https://ieeexplore.ieee.org/xpl/conhome/5876646/proceeding (Proceedings)

Conference

ConferenceConference on Lasers and Electro-Optics 2011
Abbreviated titleCLEO 2011
CountryUnited States of America
CityBaltimore
Period1/05/116/05/11
Internet address

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