Growth of large-area atomically thin MoS₂ film via ambient pressure chemical vapor deposition

Atomically thin MoS2 films have attracted significant attention due to excellent electrical and optical properties. The development of device applications demands the production of large-area thin film which is still an obstacle. In this work we developed a facile method to directly grow large-area MoS2 thin film on SiO2 substrate via ambient pressure chemical vapor deposition method. The characterizations by spectroscopy and electron microscopy reveal that the as-grown MoS2 film is mainly bilayer and trilayer with high quality. Back-gate field-effect transistor based on such MoS2 thin film shows carrier mobility up to 3.4 cm2 V−1 s−1 and on/off ratio of 105. The large-area atomically thin MoS2 prepared in this work has the potential for wide optoelectronic and photonic device applications.